BUY RJP30E4 https://www.utsource.net/itm/p/1905006.html
Silicon N Channel IGBT High Speed Power Switching
Description: The RJP30E4 is a silicon N-Channel MOSFET device with superior switching performance. Features: - Low On-Resistance: RDS(on) = 6.5mΩ max @ VGS = 10V - Low Gate Charge: Qg(typ) = 16nC - Low Input Capacitance: Ciss = 131pF max - Fast Switching Speed: tD(on)/tR > 4.5/3.5ns @VGS=10V - No Secondary Breakdown Problem Applications: - Switching regulators - DC/DC converters - General purpose power switching applications (For reference only)