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SFH309FA-4

Specifications

SKU: 1920454

BUY SFH309FA-4 https://www.utsource.net/itm/p/1920454.html
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Parameter Symbol Min Typ Max Unit
Forward Current IF - 10 50 mA
Peak Forward Current IF(P) - - 100 mA (10 ms)
Reverse Voltage VR - - 5 V
Forward Voltage VF 1.2 1.6 2.0 V @ IF=20mA
Spectral Sensitivity λp 850 - - nm
Rise Time tr - 10 - μs
Fall Time tf - 12 - μs
Operating Temperature Toper -40 - 85 °C
Storage Temperature Tstg -40 - 100 °C

Instructions for Use:

  1. Mounting:

    • Ensure that the component is mounted on a flat and clean surface.
    • Use appropriate soldering techniques to avoid thermal shock.
  2. Electrical Connections:

    • Connect the anode and cathode correctly to avoid damage.
    • Do not exceed the maximum forward current (IF) or peak forward current (IF(P)) ratings.
  3. Environmental Conditions:

    • Operate the device within the specified temperature range to ensure reliable performance.
    • Store the device in a dry environment to prevent moisture damage.
  4. Handling:

    • Handle with care to avoid mechanical stress.
    • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
  5. Testing:

    • Test the device using the recommended test conditions to ensure it meets the specified parameters.
    • Avoid prolonged testing at maximum ratings to prevent premature wear.
  6. Mounting Orientation:

    • Mount the device in the correct orientation as indicated by the pin markings.
    • Ensure proper alignment to avoid short circuits or incorrect connections.
  7. Soldering:

    • Use a soldering iron with a temperature not exceeding 300°C.
    • Soldering time should not exceed 3 seconds per connection to prevent thermal damage.
(For reference only)

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