Specifications
SKU: 1920454
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Forward Current | IF | - | 10 | 50 | mA |
Peak Forward Current | IF(P) | - | - | 100 | mA (10 ms) |
Reverse Voltage | VR | - | - | 5 | V |
Forward Voltage | VF | 1.2 | 1.6 | 2.0 | V @ IF=20mA |
Spectral Sensitivity | λp | 850 | - | - | nm |
Rise Time | tr | - | 10 | - | μs |
Fall Time | tf | - | 12 | - | μs |
Operating Temperature | Toper | -40 | - | 85 | °C |
Storage Temperature | Tstg | -40 | - | 100 | °C |
Instructions for Use:
Mounting:
- Ensure that the component is mounted on a flat and clean surface.
- Use appropriate soldering techniques to avoid thermal shock.
Electrical Connections:
- Connect the anode and cathode correctly to avoid damage.
- Do not exceed the maximum forward current (IF) or peak forward current (IF(P)) ratings.
Environmental Conditions:
- Operate the device within the specified temperature range to ensure reliable performance.
- Store the device in a dry environment to prevent moisture damage.
Handling:
- Handle with care to avoid mechanical stress.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Testing:
- Test the device using the recommended test conditions to ensure it meets the specified parameters.
- Avoid prolonged testing at maximum ratings to prevent premature wear.
Mounting Orientation:
- Mount the device in the correct orientation as indicated by the pin markings.
- Ensure proper alignment to avoid short circuits or incorrect connections.
Soldering:
- Use a soldering iron with a temperature not exceeding 300°C.
- Soldering time should not exceed 3 seconds per connection to prevent thermal damage.
Inquiry - SFH309FA-4