BUY FGL35N120FTDTU https://www.utsource.net/itm/p/1924653.html
INSULATED GATE BIPOLAR TRANSISTO
FGL35N120FTDTU is an insulated-gate bipolar transistor (IGBT) manufactured by Rochester Electronics LLC. It has a maximum collector-emitter voltage of 1200V, a maximum collector current of 35A, and a maximum power dissipation of 250W. The device is suitable for use in a wide range of applications, including motor control, welding, UPS, solar inverters, and lighting. It features a low gate charge, low on-state resistance, and fast switching speed. (For reference only)