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2SC1384-Q

Specifications

SKU: 4029486

BUY 2SC1384-Q https://www.utsource.net/itm/p/4029486.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 60 V
Emitter-Base Voltage VEB - - 5 V
Collector Current IC - - 200 mA
Base Current IB - - 20 mA
Power Dissipation PT - - 625 mW
Storage Temperature Range TSTG -55 - 150 °C
Operating Temperature TA -55 - 150 °C
Transition Frequency fT - 250 - MHz

Instructions for Use:

  1. Mounting:

    • Ensure proper heat dissipation if operating near maximum power dissipation.
    • Use a heatsink if necessary to maintain operating temperatures within specified limits.
  2. Biasing:

    • Ensure that the base current (IB) is sufficient to drive the transistor into saturation when required.
    • Avoid exceeding the maximum base current (IB) to prevent damage.
  3. Voltage Ratings:

    • Do not exceed the maximum collector-emitter voltage (VCE) or emitter-base voltage (VEB).
    • Ensure that the supply voltage is within the rated limits to avoid breakdown.
  4. Current Handling:

    • The maximum collector current (IC) should not be exceeded to prevent overheating and potential failure.
    • Use appropriate current-limiting resistors if necessary.
  5. Thermal Management:

    • Monitor the operating temperature (TA) to ensure it remains within the specified range.
    • If operating in high-temperature environments, consider additional cooling measures.
  6. Storage:

    • Store the device in a dry, cool place within the storage temperature range (TSTG).
    • Avoid exposure to extreme temperatures and humidity to prevent damage.
  7. Handling:

    • Handle with care to avoid mechanical stress on the leads.
    • Use appropriate ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
(For reference only)

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