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Specifications
SKU: 4030279
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | IC = 150 mA | - | - | 60 | V |
| Emitter-Collector Voltage | VECC | IC = 150 mA | - | - | 60 | V |
| Collector-Base Voltage | VCBO | IB = 0 mA | - | - | 60 | V |
| Base-Emitter Voltage | VBE | IC = 150 mA, IB = 10 mA | - | 2.0 | 3.0 | V |
| Continuous Collector Current | IC | TA = 25°C | - | 150 | 150 | mA |
| Power Dissipation | PT | TA = 25°C | - | - | 625 | mW |
| Junction Temperature | TJ | - | - | - | 150 | °C |
| Storage Temperature | TSTG | - | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures exceeding the maximum junction temperature (TJ) of 150°C.
- Handle the device with care to prevent damage to the leads and the semiconductor structure.
Mounting:
- Ensure proper heat sinking if operating near the maximum power dissipation (PT).
- Use appropriate mounting techniques to avoid mechanical stress on the leads.
Electrical Connections:
- Connect the collector (C), base (B), and emitter (E) according to the circuit diagram.
- Ensure that the voltage across the collector and emitter (VCEO) does not exceed 60V.
Biasing:
- The base-emitter voltage (VBE) should be kept within the range of 2.0V to 3.0V for optimal performance.
- Use a suitable base resistor to limit the base current (IB) and prevent excessive collector current (IC).
Storage:
- Store the device in a dry, cool place within the temperature range of -55°C to 150°C.
- Protect the device from static electricity by using anti-static packaging.
Testing:
- Use a multimeter or an oscilloscope to verify the electrical parameters before integrating the transistor into a circuit.
- Test the device under controlled conditions to ensure it meets the specified parameters.
Inquiry - 2SC5404
