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2SB1188-Q

Specifications

SKU: 4035026

BUY 2SB1188-Q https://www.utsource.net/itm/p/4035026.html
PNP Plastic-Encapsulate Transistors
Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCEO - - 450 V IC = 0.5mA, IE = 0
Emitter-Collector Voltage VECS - - 450 V IC = 0.5mA, IB = 0
Base-Emitter Voltage VBE - 1.3 - V IC = 100mA, IE = 0
Collector Current IC - 100 - mA VCE = 30V
Base Current IB - 5 - mA VCE = 30V, IC = 100mA
Power Dissipation PT - - 625 mW TA = 25°C
Operating Temperature Range TOP -55 - 150 °C -
Storage Temperature Range TSTG -55 - 150 °C -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside the operating range.
    • Use appropriate heat sinks if the power dissipation exceeds the rated value.
  2. Mounting:

    • Ensure proper alignment of the pins (E, B, C) during soldering.
    • Apply thermal paste between the transistor and heat sink for better heat dissipation.
  3. Biasing:

    • For optimal performance, ensure the base current is sufficient to drive the collector current.
    • Use a resistor in series with the base to limit the base current and prevent damage.
  4. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from static sources to avoid damage to the sensitive components.
  5. Testing:

    • Use a multimeter to check the continuity and resistance between the pins before installation.
    • Test the transistor under controlled conditions to ensure it meets the specified parameters.
(For reference only)

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