Specifications
SKU: 4035026
PNP Plastic-Encapsulate Transistors
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 450 | V | IC = 0.5mA, IE = 0 |
Emitter-Collector Voltage | VECS | - | - | 450 | V | IC = 0.5mA, IB = 0 |
Base-Emitter Voltage | VBE | - | 1.3 | - | V | IC = 100mA, IE = 0 |
Collector Current | IC | - | 100 | - | mA | VCE = 30V |
Base Current | IB | - | 5 | - | mA | VCE = 30V, IC = 100mA |
Power Dissipation | PT | - | - | 625 | mW | TA = 25°C |
Operating Temperature Range | TOP | -55 | - | 150 | °C | - |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures outside the operating range.
- Use appropriate heat sinks if the power dissipation exceeds the rated value.
Mounting:
- Ensure proper alignment of the pins (E, B, C) during soldering.
- Apply thermal paste between the transistor and heat sink for better heat dissipation.
Biasing:
- For optimal performance, ensure the base current is sufficient to drive the collector current.
- Use a resistor in series with the base to limit the base current and prevent damage.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Keep away from static sources to avoid damage to the sensitive components.
Testing:
- Use a multimeter to check the continuity and resistance between the pins before installation.
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
Inquiry - 2SB1188-Q