Specifications
SKU: 4038434
Power transistor (60V, 3A)
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 600 | V | IC = 10mA, IB = 0mA |
Collector-Base Voltage | VCBO | - | - | 700 | V | IC = 10mA, IE = 0mA |
Emitter-Base Voltage | VEBO | - | - | 6 | V | IE = 50mA |
Collector Current | IC | - | - | 3000 | mA | VCE = 1V |
Base Current | IB | - | - | 300 | mA | VCE = 1V |
DC Current Gain | hFE | 20 | 70 | 200 | - | IC = 150mA, VCE = 10V |
Transition Frequency | fT | - | 150 | - | MHz | IC = 150mA, VCE = 10V |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Operating Temperature Range | TOP | -55 | - | 150 | °C | - |
Instructions for Use:
Mounting and Handling:
- Handle the transistor with care to avoid mechanical stress.
- Ensure proper heat sinking if operating at high power levels.
Biasing:
- Use appropriate biasing circuits to ensure stable operation.
- Avoid exceeding the maximum ratings for collector-emitter voltage, collector current, and base current.
Thermal Management:
- Ensure adequate cooling to prevent overheating, especially when operating near the maximum power dissipation.
- Use thermal paste between the transistor and heat sink for better thermal conductivity.
Storage:
- Store in a dry place within the specified storage temperature range.
- Avoid exposure to extreme temperatures and humidity.
Testing:
- Test the transistor under controlled conditions to verify its performance.
- Use a multimeter or transistor tester to check for continuity and gain.
Soldering:
- Use a low-wattage soldering iron to avoid damaging the transistor.
- Preheat the PCB to reduce thermal shock during soldering.
Circuit Design:
- Refer to application notes and datasheets for recommended circuit designs.
- Consider using protection diodes to prevent reverse voltage spikes.
Safety:
- Always disconnect power before making any changes to the circuit.
- Use appropriate safety gear when handling high-voltage circuits.
Inquiry - 2SC5825