BUY 2SC3788-E https://www.utsource.net/itm/p/4042893.html

2SC3788-E is a NPN epitaxial planar silicon transistor manufactured by SANYO. It is designed for use in high-frequency power amplifiers and switching circuits. Description: The 2SC3788-E is a NPN epitaxial planar silicon transistor in a TO-126 package. It has a high current gain, high breakdown voltage and low saturation voltage. Features: High current gain (hFE): hFE = 100 (typ.) High breakdown voltage (BVceo): BVceo = 160V (min.) Low saturation voltage (Vce(sat)): Vce(sat) = 0.3V (max.) High frequency operation: fT = 10MHz (typ.) Low noise: NF = 0.5dB (typ.) Low collector-emitter capacitance: Cce = 0.2pF (typ.) Applications: High-frequency power amplifiers Switching circuits Audio amplifiers Voltage regulators (For reference only)