Specifications
SKU: 4044258
Silicon NPN epitaxial planer type
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 50 | V |
Collector-Base Voltage | VCBO | - | - | 60 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | 150 | - | mA |
Base Current | IB | - | 15 | - | mA |
Power Dissipation | PT | - | - | 350 | mW |
Operating Temperature | TA | -55 | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Transition Frequency | fT | - | 200 | - | MHz |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings to prevent damage.
- Use proper heat sinking if operating near the maximum power dissipation.
Biasing:
- Ensure the base current is sufficient to keep the transistor in the desired operating region (cut-off, active, or saturation).
Mounting:
- Mount the transistor on a suitable heatsink if continuous operation at high power is required.
- Follow the recommended PCB layout guidelines to minimize stray inductance and capacitance.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid mechanical damage.
Testing:
- Use a multimeter or transistor tester to verify the functionality before installation.
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
Applications:
- Suitable for general-purpose amplification, switching circuits, and low-power RF applications.
Inquiry - 2SC2634