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2SC2634

Specifications

SKU: 4044258

BUY 2SC2634 https://www.utsource.net/itm/p/4044258.html
Silicon NPN epitaxial planer type
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 50 V
Collector-Base Voltage VCBO - - 60 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - 150 - mA
Base Current IB - 15 - mA
Power Dissipation PT - - 350 mW
Operating Temperature TA -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Transition Frequency fT - 200 - MHz

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage.
    • Use proper heat sinking if operating near the maximum power dissipation.
  2. Biasing:

    • Ensure the base current is sufficient to keep the transistor in the desired operating region (cut-off, active, or saturation).
  3. Mounting:

    • Mount the transistor on a suitable heatsink if continuous operation at high power is required.
    • Follow the recommended PCB layout guidelines to minimize stray inductance and capacitance.
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality before installation.
    • Test the transistor under controlled conditions to ensure it meets the specified parameters.
  6. Applications:

    • Suitable for general-purpose amplification, switching circuits, and low-power RF applications.
(For reference only)

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