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Specifications
SKU: 4058253
Below is the parameter table and instructions for the 340N08NS, which is a silicon N-channel MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 800 | V | - |
| Gate-Source Voltage | VGSS | -15 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 40 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 34 | - | A | TC = 100°C |
| Pulse Drain Current | IDpeak | - | 170 | - | A | tp = 10 μs, IGT = 6 A |
| Gate Charge | QG | - | 140 | - | nC | - |
| Input Capacitance | Ciss | - | 2200 | - | pF | VDS = 0 V, f = 1 MHz |
| Output Capacitance | Coss | - | 350 | - | pF | VDS = 500 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 1100 | - | pF | VDS = 500 V, f = 1 MHz |
| On-State Resistance | RDS(on) | - | 0.18 | - | Ω | VGS = 10 V, ID = 34 A |
| Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 μA |
| Total Power Dissipation | PTOT | - | - | 450 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Instructions
Handling and Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
Mounting and Soldering:
- Ensure that the PCB (Printed Circuit Board) is clean and free from contaminants before soldering.
- Use a soldering iron with a temperature not exceeding 350°C.
- The soldering time should not exceed 10 seconds per joint.
- Allow the device to cool down naturally after soldering to avoid thermal shock.
Operating Conditions:
- Ensure that the operating conditions (voltage, current, and temperature) do not exceed the maximum ratings specified in the parameter table.
- Use appropriate heat sinks or cooling methods if the device is expected to dissipate significant power.
- Monitor the junction temperature to ensure it remains within safe limits.
Gate Drive:
- Apply a gate voltage (VGS) sufficient to fully turn on the MOSFET, typically around 10 V for optimal performance.
- Ensure that the gate voltage does not exceed the maximum gate-source voltage (VGSS) to avoid damaging the device.
- Use a low impedance gate drive circuit to minimize switching losses and improve efficiency.
Testing:
- Before using the device in a final application, test it under controlled conditions to verify its performance and reliability.
- Use appropriate test equipment and procedures to measure parameters such as on-state resistance, threshold voltage, and gate charge.
By following these instructions, you can ensure the reliable operation and longevity of the 340N08NS MOSFET.
(For reference only)Inquiry - 340N08NS
