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45F128

Specifications

SKU: 4074794

BUY 45F128 https://www.utsource.net/itm/p/4074794.html

Parameter Symbol Min Typ Max Unit Description
Supply Voltage VDD 2.0 - 5.5 V Operating supply voltage range
Memory Size - - 128 - Kbit Total memory capacity
Data Retention Time - - 100 - Years Guaranteed data retention time at 85°C
Programming Time tPROG - 2 5 ms Typical programming time per byte
Endurance Cycles - - 1 10 Million Number of write/erase cycles
Operating Temperature Toper -40 - 85 °C Operating temperature range
Standby Current Istand 1 - 5 μA Current consumption in standby mode
Active Current Iactive 5 - 30 mA Current consumption during read/write operations
Package Type - - - - SOIC-8 Standard package type

Instructions for Using 45F128

  1. Power Supply:

    • Ensure the supply voltage (VDD) is within the range of 2.0V to 5.5V.
    • Connect the VDD pin to the positive power supply and the VSS pin to ground.
  2. Memory Access:

    • Use the standard SPI (Serial Peripheral Interface) protocol to communicate with the device.
    • The device supports standard, fast, and dual output read commands.
  3. Programming:

    • Before writing data, ensure the device is not in read or erase mode.
    • Use the Write Enable (WREN) command to enable writing.
    • Write data using the Page Program (PP) command, ensuring the address and data are correctly formatted.
    • Wait for the Write in Progress (WIP) bit to clear before performing another operation.
  4. Erasing:

    • Use the Chip Erase (CE) command to erase the entire chip.
    • Use the Sector Erase (SE) command to erase a specific sector.
    • Wait for the WIP bit to clear after issuing an erase command.
  5. Data Retention:

    • Store the device in a temperature-controlled environment to maximize data retention.
    • Avoid exposing the device to extreme temperatures for extended periods.
  6. Current Consumption:

    • Monitor the current consumption to ensure it does not exceed the specified limits.
    • Use the Standby mode to minimize power consumption when the device is not in use.
  7. Operating Temperature:

    • Ensure the operating temperature is within the specified range (-40°C to 85°C).
    • Avoid operating the device outside this range to prevent damage or data corruption.
  8. Package Handling:

    • Handle the device with care to avoid mechanical damage.
    • Follow standard ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

By following these instructions, you can ensure reliable and efficient operation of the 45F128 memory device.

(For reference only)

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