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8N65L

Specifications

SKU: 4112796

BUY 8N65L https://www.utsource.net/itm/p/4112796.html

Parameter Symbol Min Typ Max Unit
Forward Voltage VF - 1.2 1.4 V
Reverse Blocking Voltage VR(M) - - 650 V
Continuous Forward Current IF - 8 - A
Peak Pulse Forward Current IFSM - 100 - A
Total Power Dissipation PT - 65 - W
Junction Temperature TJ -40 - 150 °C
Storage Temperature TSTG -40 - 150 °C

Instructions for Use:

  1. Forward Voltage (VF): Ensure that the forward voltage across the diode does not exceed 1.4V to prevent excessive power dissipation.
  2. Reverse Blocking Voltage (VR(M)): The diode is designed to block up to 650V in reverse bias. Do not exceed this voltage to avoid breakdown.
  3. Continuous Forward Current (IF): The diode can handle a continuous forward current of up to 8A. Exceeding this value may cause overheating and damage.
  4. Peak Pulse Forward Current (IFSM): The diode can handle peak pulse currents up to 100A, but only for short durations. Ensure the pulse width and frequency are within safe limits.
  5. Total Power Dissipation (PT): The maximum power dissipation is 65W. Proper heat sinking is required to manage heat and maintain the junction temperature within safe limits.
  6. Junction Temperature (TJ): The operating junction temperature range is from -40°C to 150°C. Ensure adequate cooling to keep the temperature within this range.
  7. Storage Temperature (TSTG): Store the diode in an environment where the temperature ranges from -40°C to 150°C to prevent damage.

Additional Notes:

  • Always use appropriate heatsinks or cooling methods to ensure the diode operates within its specified temperature range.
  • Ensure all connections are secure and free from corrosion to prevent electrical issues.
  • Follow standard safety guidelines when handling and installing electronic components.
(For reference only)

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