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AO4474

Specifications

SKU: 4201380

BUY AO4474 https://www.utsource.net/itm/p/4201380.html
N-Channel Enhancement Mode Field Effect Transistor
Parameter Symbol Min Typ Max Unit Conditions
Input Voltage VIN 1.8 - 5.5 V -
Continuous Drain Current ID - 4.2 6.0 A Ta = 25°C
Pulse Drain Current IDM - - 9.0 A tp = 100μs, duty cycle 1%
Gate-Source Voltage VGS -2.0 - 6.0 V -
Gate Threshold Voltage VGS(th) 0.8 1.2 1.6 V ID = 250μA
On-State Resistance RDS(on) - 0.035 0.055 Ω VGS = 4.5V, ID = 4.2A
Total Power Dissipation PTOT - - 1.5 W Ta = 25°C
Junction Temperature TJ -55 - 150 °C -
Storage Temperature TSTG -55 - 150 °C -

Instructions for Use:

  1. Operating Voltage: Ensure that the input voltage (VIN) is within the range of 1.8V to 5.5V to avoid damage to the device.
  2. Current Handling: The continuous drain current (ID) should not exceed 6.0A at room temperature (25°C). For pulse applications, ensure that the pulse drain current (IDM) does not exceed 9.0A with a pulse width of 100μs and a duty cycle of 1%.
  3. Gate-Source Voltage: Apply a gate-source voltage (VGS) between -2.0V and 6.0V. The gate threshold voltage (VGS(th)) is typically between 0.8V and 1.6V.
  4. On-State Resistance: The on-state resistance (RDS(on)) is typically 0.035Ω at VGS = 4.5V and ID = 4.2A. Ensure that the power dissipation (PTOT) does not exceed 1.5W at room temperature.
  5. Temperature Management: The junction temperature (TJ) should be kept between -55°C and 150°C. The storage temperature (TSTG) should also be within this range.
  6. Mounting and Handling: Handle the device with care to avoid static damage. Ensure proper thermal management by using appropriate heatsinks if necessary.
  7. Soldering: Follow standard soldering practices to avoid thermal shock. Use a soldering iron with a temperature of approximately 300°C and complete the soldering process within 10 seconds.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)

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