Specifications
SKU: 4243965
OptiMOS?3 Power-Transistor
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | -40 | - | 40 | V | |
Gate-Source Voltage | VGS | -20 | - | 20 | V | |
Continuous Drain Current | ID | - | 97 | - | A | @ TC = 25°C, VDS = 4V, VGS = 10V |
Power Dissipation | PTOT | - | - | 230 | W | @ TC = 25°C, RθJC = 0.5 K/W |
Junction Temperature | TJ | - | - | 175 | °C | |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | |
Thermal Resistance | RθJC | - | - | 0.5 | K/W |
Instructions:
Operating Conditions:
- Ensure that the drain-source voltage (VDS) does not exceed 40V.
- The gate-source voltage (VGS) should be within ±20V.
- The continuous drain current (ID) should not exceed 97A at a case temperature (TC) of 25°C.
- The power dissipation (PTOT) should not exceed 230W at a case temperature (TC) of 25°C.
Temperature Management:
- The junction temperature (TJ) should not exceed 175°C.
- Store the device within the storage temperature range of -65°C to 150°C.
Thermal Considerations:
- Use appropriate heat sinks or cooling methods to manage the thermal resistance (RθJC) of 0.5 K/W.
Handling Precautions:
- Handle the device with care to avoid damage to the leads and body.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
Mounting:
- Ensure proper mounting to maintain electrical and thermal performance.
- Follow the recommended PCB layout and soldering guidelines provided by the manufacturer.
Inquiry - BSZ097N04LSG