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BSZ097N04LSG

Specifications

SKU: 4243965

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OptiMOS?3 Power-Transistor
Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS -40 - 40 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 97 - A @ TC = 25°C, VDS = 4V, VGS = 10V
Power Dissipation PTOT - - 230 W @ TC = 25°C, RθJC = 0.5 K/W
Junction Temperature TJ - - 175 °C
Storage Temperature Range TSTG -65 - 150 °C
Thermal Resistance RθJC - - 0.5 K/W

Instructions:

  1. Operating Conditions:

    • Ensure that the drain-source voltage (VDS) does not exceed 40V.
    • The gate-source voltage (VGS) should be within ±20V.
    • The continuous drain current (ID) should not exceed 97A at a case temperature (TC) of 25°C.
    • The power dissipation (PTOT) should not exceed 230W at a case temperature (TC) of 25°C.
  2. Temperature Management:

    • The junction temperature (TJ) should not exceed 175°C.
    • Store the device within the storage temperature range of -65°C to 150°C.
  3. Thermal Considerations:

    • Use appropriate heat sinks or cooling methods to manage the thermal resistance (RθJC) of 0.5 K/W.
  4. Handling Precautions:

    • Handle the device with care to avoid damage to the leads and body.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
  5. Mounting:

    • Ensure proper mounting to maintain electrical and thermal performance.
    • Follow the recommended PCB layout and soldering guidelines provided by the manufacturer.
(For reference only)

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