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CY14E256LA-SZ25XI

Specifications

SKU: 4360660

BUY CY14E256LA-SZ25XI https://www.utsource.net/itm/p/4360660.html
256 Kbit (32K x 8) nvSRAM
Parameter Description
Part Number CY14E256LA-SZ25XI
Type Non-Volatile Static Random Access Memory (NVS RAM)
Density 256 Kbits (32K x 8)
Vcc Operating Range 1.7 V to 3.6 V
I/O Voltage 1.7 V to 3.6 V
Data Retention 10 years at 85°C, 20 years at 25°C
Write Cycle Time 70 ns typical, 150 ns maximum
Read Cycle Time 70 ns typical, 150 ns maximum
Access Time 45 ns typical, 70 ns maximum
Standby Current 1 μA typical, 5 μA maximum
Active Current 10 mA typical, 20 mA maximum
Package 24-pin TSSOP (Thin Small Outline Package)
Operating Temperature -40°C to +85°C
Endurance Unlimited reads, 1 million write/erase cycles
Memory Organization 32K x 8
Interface SPI (Serial Peripheral Interface)
Pin Configuration VCC, GND, CS, SCK, MOSI, MISO, WP, HOLD

Instructions for Use

  1. Power Supply:

    • Connect VCC to a stable power supply within the operating range (1.7 V to 3.6 V).
    • Connect GND to the ground.
  2. SPI Interface:

    • CS (Chip Select): Active low. When low, the device is selected and can communicate.
    • SCK (Serial Clock): Input clock signal for synchronization.
    • MOSI (Master Out Slave In): Data input from the master to the device.
    • MISO (Master In Slave Out): Data output from the device to the master.
    • WP (Write Protect): Active low. When low, write operations are inhibited.
    • HOLD (Hold): Active low. When low, it pauses ongoing operations.
  3. Initialization:

    • Ensure that the device is powered on and CS is high.
    • Set the WP pin to high to allow write operations.
    • Set the HOLD pin to high to prevent pausing operations.
  4. Reading Data:

    • Pull CS low to select the device.
    • Send the read command (e.g., 0x03) followed by the address of the memory location.
    • The device will respond with the data at the specified address.
    • Pull CS high to deselect the device.
  5. Writing Data:

    • Pull CS low to select the device.
    • Send the write enable command (e.g., 0x06).
    • Send the write command (e.g., 0x02) followed by the address and data to be written.
    • Wait for the write cycle to complete (typically 70 ns to 150 ns).
    • Pull CS high to deselect the device.
  6. Data Retention:

    • Ensure that the device is not exposed to temperatures exceeding 85°C for extended periods to maintain data retention for up to 10 years.
  7. Endurance:

    • The device supports unlimited reads and up to 1 million write/erase cycles. Avoid excessive write operations to extend the lifespan.
  8. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal circuitry.
    • Store the device in a dry, cool environment when not in use.

For detailed programming and application notes, refer to the datasheet provided by Cypress Semiconductor.

(For reference only)

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