Specifications
SKU: 4360660
256 Kbit (32K x 8) nvSRAM
Parameter | Description |
---|---|
Part Number | CY14E256LA-SZ25XI |
Type | Non-Volatile Static Random Access Memory (NVS RAM) |
Density | 256 Kbits (32K x 8) |
Vcc Operating Range | 1.7 V to 3.6 V |
I/O Voltage | 1.7 V to 3.6 V |
Data Retention | 10 years at 85°C, 20 years at 25°C |
Write Cycle Time | 70 ns typical, 150 ns maximum |
Read Cycle Time | 70 ns typical, 150 ns maximum |
Access Time | 45 ns typical, 70 ns maximum |
Standby Current | 1 μA typical, 5 μA maximum |
Active Current | 10 mA typical, 20 mA maximum |
Package | 24-pin TSSOP (Thin Small Outline Package) |
Operating Temperature | -40°C to +85°C |
Endurance | Unlimited reads, 1 million write/erase cycles |
Memory Organization | 32K x 8 |
Interface | SPI (Serial Peripheral Interface) |
Pin Configuration | VCC, GND, CS, SCK, MOSI, MISO, WP, HOLD |
Instructions for Use
Power Supply:
- Connect VCC to a stable power supply within the operating range (1.7 V to 3.6 V).
- Connect GND to the ground.
SPI Interface:
- CS (Chip Select): Active low. When low, the device is selected and can communicate.
- SCK (Serial Clock): Input clock signal for synchronization.
- MOSI (Master Out Slave In): Data input from the master to the device.
- MISO (Master In Slave Out): Data output from the device to the master.
- WP (Write Protect): Active low. When low, write operations are inhibited.
- HOLD (Hold): Active low. When low, it pauses ongoing operations.
Initialization:
- Ensure that the device is powered on and CS is high.
- Set the WP pin to high to allow write operations.
- Set the HOLD pin to high to prevent pausing operations.
Reading Data:
- Pull CS low to select the device.
- Send the read command (e.g., 0x03) followed by the address of the memory location.
- The device will respond with the data at the specified address.
- Pull CS high to deselect the device.
Writing Data:
- Pull CS low to select the device.
- Send the write enable command (e.g., 0x06).
- Send the write command (e.g., 0x02) followed by the address and data to be written.
- Wait for the write cycle to complete (typically 70 ns to 150 ns).
- Pull CS high to deselect the device.
Data Retention:
- Ensure that the device is not exposed to temperatures exceeding 85°C for extended periods to maintain data retention for up to 10 years.
Endurance:
- The device supports unlimited reads and up to 1 million write/erase cycles. Avoid excessive write operations to extend the lifespan.
Handling:
- Handle the device with care to avoid static discharge, which can damage the internal circuitry.
- Store the device in a dry, cool environment when not in use.
For detailed programming and application notes, refer to the datasheet provided by Cypress Semiconductor.
(For reference only)Inquiry - CY14E256LA-SZ25XI