Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage ( V_ ) does not exceed 900V.
   • The gate-source voltage ( V_ ) should be within ±20V to avoid damage to the gate oxide.

2. Current Handling:

   • The continuous drain current ( I_D ) should not exceed 7A.
   • For pulse conditions (10 μs, 1% duty cycle), the drain current can reach up to 35A.

3. Power Dissipation:

   • The total power dissipation ( P_ ) should not exceed 140W to prevent overheating and potential damage.

4. Temperature Considerations:

   • The junction temperature ( T_J ) should be maintained between -55°C and +175°C.
   • The storage temperature ( T_ ) range is from -65°C to +150°C.

5. Capacitance Parameters:

   • The input capacitance ( C_ ) is 2500pF.
   • The output capacitance ( C_ ) is 1100pF.
   • The reverse transfer capacitance ( C_ ) is 700pF.

6. Gate Drive:

   • Use a low-impedance driver to minimize switching times and reduce switching losses.
   • Ensure the gate resistor is appropriately chosen to control the rate of rise of the gate voltage and current.

7. Thermal Management:

   • Proper heat sinking is essential to manage the junction temperature, especially under high power conditions.
   • Regularly monitor the temperature to ensure it remains within safe limits.

8. Storage and Handling:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress or static discharge, which can damage the device.

9. Testing and Troubleshooting:

   • Use appropriate test equipment and follow safety guidelines when testing the device.
   • If the device fails, check for overvoltage, overcurrent, or thermal issues.

10. Compliance and Standards:

    • Ensure the device complies with relevant safety and performance standards for your application.