Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 1.7V to 3.6V.
   • Connect the Vcc pin to the power supply and GND pin to ground.

2. SPI Interface:

   • Connect the SPI pins (MISO, MOSI, SCK, CS) to the corresponding pins on your microcontroller or SPI master device.
   • Set the chip select (CS) pin low to enable communication.

3. Initialization:

   • After powering up, ensure the device is properly initialized by sending the appropriate SPI commands.
   • Refer to the datasheet for specific command sequences.

4. Reading Data:

   • To read data, send the READ command followed by the address of the memory location.
   • The device will then output the data from the specified address.

5. Writing Data:

   • To write data, send the WRITE command followed by the address and the data to be written.
   • The device will store the data at the specified address with no write delay.

6. Endurance and Data Retention:

   • This device has unlimited write endurance and a data retention period of 100 years.
   • No wear-leveling algorithms are required for this FRAM memory.

7. Handling Precautions:

   • Handle the device with care to avoid static damage.
   • Store the device in a dry environment to prevent moisture damage.

8. Testing:

   • Before deploying the device in a final application, perform thorough testing to ensure it meets the required performance specifications.

For detailed information, refer to the FM25W256-GTR datasheet provided by the manufacturer.