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HSU88TRF

Specifications

SKU: 4524029

BUY HSU88TRF https://www.utsource.net/itm/p/4524029.html

Parameter Symbol Min Typ Max Unit Description
Supply Voltage VDD 2.7 - 5.5 V Operating supply voltage range
Quiescent Current IQ - 10 - μA Current consumption in quiescent state
Output Current IO - 50 100 mA Continuous output current per channel
Output Voltage Drop VD - 0.2 - V Voltage drop across the output when sourcing/sinking current
Thermal Shutdown TSD - 160 - °C Temperature at which thermal shutdown activates
Operating Temperature TOPR -40 - 85 °C Ambient operating temperature range
Storage Temperature TSTG -55 - 150 °C Temperature range for storage

Instructions for Using HSU88TRF

  1. Power Supply:

    • Ensure the supply voltage (VDD) is within the specified range of 2.7V to 5.5V.
    • Use a stable power source to avoid fluctuations that could affect performance.
  2. Quiescent Current:

    • The device consumes approximately 10μA in the quiescent state. This should be considered in low-power applications.
  3. Output Current:

    • The device can source or sink up to 100mA per channel continuously, with a typical value of 50mA.
    • Avoid exceeding the maximum output current to prevent damage to the device.
  4. Output Voltage Drop:

    • The voltage drop across the output when sourcing or sinking current is typically 0.2V. This should be factored into the design to ensure proper operation of connected devices.
  5. Thermal Management:

    • The device has a thermal shutdown feature that activates at approximately 160°C to protect against overheating.
    • Ensure adequate heat dissipation, especially in high-current applications, to prevent thermal shutdown.
  6. Operating Temperature:

    • The device is designed to operate within an ambient temperature range of -40°C to 85°C.
    • Ensure the operating environment does not exceed these limits to maintain reliable performance.
  7. Storage Temperature:

    • Store the device in an environment with a temperature range of -55°C to 150°C to prevent damage during storage.
  8. Handling:

    • Handle the device with care to avoid static discharge, which can damage sensitive components.
    • Follow standard ESD (Electrostatic Discharge) precautions when handling and installing the device.
  9. Layout Considerations:

    • Place the device close to the load to minimize trace resistance and inductance.
    • Use decoupling capacitors near the power pins to filter out noise and ensure stable operation.
  10. Testing:

    • Before finalizing the design, test the device under various conditions to ensure it meets the required specifications and performance criteria.
(For reference only)

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