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IRG7S313UTRLPBF

Specifications

SKU: 4545646

BUY IRG7S313UTRLPBF https://www.utsource.net/itm/p/4545646.html
PDP 330V 40A D2PAK
Parameter Symbol Min Typical Max Unit Notes
Continuous Drain Current ID - 35 - A @ Tc = 25°C, VGS = 10V
Pulse Drain Current IDM - 65 - A @ Tc = 25°C, t = 10ms, Duty Cycle = 1%
Gate-Source Voltage VGS -15 - 15 V -
Drain-Source Breakdown Voltage VDS - 700 - V -
On-State Resistance RDS(on) - 0.39 - Ω @ VGS = 10V, ID = 35A
Gate Charge Qg - 244 - nC -
Input Capacitance Ciss - 2880 - pF @ VDS = 400V, f = 1MHz
Output Capacitance Coss - 165 - pF @ VDS = 400V, f = 1MHz
Reverse Transfer Capacitance Crss - 115 - pF @ VDS = 400V, f = 1MHz
Total Switching Energy ETSW - 1100 - μJ @ VDS = 400V, ID = 35A, f = 100kHz
Junction Temperature TJ -55 - 175 °C -
Storage Temperature TSTG -55 - 150 °C -

Instructions for Use:

  1. Handling Precautions:

    • Handle with care to avoid damage to the device.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper thermal management by using a heatsink or other cooling methods to keep the junction temperature within the specified range.
    • Follow the recommended PCB layout guidelines to minimize parasitic inductances and ensure reliable operation.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the device.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  4. Current Limitation:

    • Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings.
    • Ensure that the power dissipation is within safe limits to avoid overheating.
  5. Testing:

    • Perform initial testing at low power levels to verify the correct operation of the circuit.
    • Monitor the temperature and performance parameters during operation to ensure reliability.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Follow the storage temperature range (TSTG) to prevent degradation of the device.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use appropriate personal protective equipment (PPE) as necessary.
(For reference only)

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