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Specifications
SKU: 4564945
Power MOSFET ( Vdss=55V , Rds(on) =13.9mohm , Id=51A )
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 55 | V | - |
| Gate-Source Voltage | VGS | -10 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 49 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 31 | - | A | TC = 100°C |
| Pulse Drain Current | IDM | - | 80 | - | A | tp = 10ms, IAS = 0A |
| Power Dissipation | PD | - | - | 175 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
| Thermal Resistance | RθJC | - | - | 0.45 | °C/W | - |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings to prevent damage.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure good thermal contact between the device and the heat sink.
- Use a suitable thermal compound to enhance heat dissipation.
Biasing:
- Apply gate-source voltage (VGS) within the specified range to avoid gate oxide breakdown.
- Ensure the drain-source voltage (VDS) does not exceed the maximum rating.
Operation:
- Operate the device within the continuous drain current (ID) limits for reliable performance.
- For pulse operation, ensure the pulse duration (tp) and average current (IAS) are within the specified limits.
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use appropriate cooling methods to keep the device within the safe operating area.
Storage:
- Store the device in a dry, cool environment within the specified storage temperature range.
Testing:
- Perform regular testing to ensure the device is functioning correctly and within specifications.
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