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Specifications
SKU: 4574490
OptiMOS?3 Power-Transistor
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | - | 600 | V |
| Gate-Source Voltage | VGS | - | -15 | - | 20 | V |
| Continuous Drain Current | ID | TC = 25°C | - | 93 | - | A |
| Continuous Drain Current | ID | TC = 100°C | - | 70 | - | A |
| Pulse Drain Current | IDM | Tj = 25°C, 10 μs pulse | - | 450 | - | A |
| Total Power Dissipation | PTOT | TC = 25°C | - | 200 | - | W |
| Junction Temperature | Tj | - | -55 | - | 175 | °C |
| Storage Temperature | Tstg | - | -55 | - | 150 | °C |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | - | 0.5 | - | K/W |
| Input Capacitance | Ciss | VDS = 500V, f = 1 MHz | - | 1500 | - | pF |
| Output Capacitance | Coss | VDS = 500V, f = 1 MHz | - | 250 | - | pF |
| Gate Charge | QG | VGS = 15V, ID = 93A | - | 80 | - | nC |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage to the leads and body.
- Use appropriate ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use recommended soldering profiles to avoid thermal stress during assembly.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate oxide damage.
Thermal Management:
- The thermal resistance (Rth(j-c)) should be considered when designing the heat sink to ensure adequate cooling.
- Monitor the junction temperature (Tj) to prevent overheating, which can lead to device failure.
Capacitance and Gate Charge:
- The input capacitance (Ciss) and output capacitance (Coss) affect the switching performance. Use these values to design the gate drive circuitry.
- The gate charge (QG) is crucial for determining the required gate drive current and power.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Follow the storage temperature limits to ensure long-term reliability.
Testing:
- Use the test conditions provided in the table for accurate characterization and testing of the device.
- Verify the device parameters using the specified test conditions to ensure compliance with the datasheet specifications.
Inquiry - IPP093N06N3G
