BUY IXTH6N150 https://www.utsource.net/itm/p/4588158.html
High Voltage Power MOSFETs
Description: The IXTH6N150 is a high power, insulated gate bipolar transistor (IGBT) module from IXYS. Features: High voltage rating of 600V Low on-state voltage drop of 1.5V High current rating of 150A Low switching losses High frequency operation Low EMI Applications: The IXTH6N150 is suitable for use in motor control, welding, UPS, solar inverters, and other high power applications. (For reference only)