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Specifications
SKU: 4837071
| Parameter | Description | Value |
|---|---|---|
| Part Number | Full Part Number | MT41K512M8RH-125:E |
| Memory Type | Type of Memory | DDR3 SDRAM |
| Density | Total Memory Density | 512 Mbit |
| Organization | Memory Organization | 64M x 8 |
| Voltage (Vdd/Vddq) | Supply Voltage | 1.35V ± 0.075V |
| Speed Grade | Access Time | 125 MHz (tCK = 8 ns) |
| Package | Package Type | FBGA |
| Pin Count | Number of Pins | 96 |
| Operating Temperature | Temperature Range | -40°C to +85°C |
| Data Rate | Maximum Data Rate | 125 MT/s |
| CAS Latency | CAS Latency (CL) | 7 |
| RAS# to CAS# Delay | RAS# to CAS# Delay (tRCD) | 7 |
| Row Precharge Time | Row Precharge Time (tRP) | 7 |
| Active to Precharge | Active to Precharge Delay (tRAS) | 20 |
| Refresh Cycle Time | Refresh Cycle Time (tREFI) | 7.8 μs |
| Self-Refresh Exit | Self-Refresh Exit Time (tXSR) | 128 ns |
| Write Recovery Time | Write Recovery Time (tWR) | 7 |
| Minimum Cycle Time | Minimum Cycle Time (tCK) | 8 ns |
| Minimum Write Pulse | Minimum Write Pulse Width (tWPL) | 2.5 ns |
| Minimum Read Pulse | Minimum Read Pulse Width (tRPL) | 2.5 ns |
| Power Down Mode | Power Down Entry/Exit Time (tPD) | 100 ns |
| Thermal Resistance | Junction to Ambient Thermal Resistance (θJA) | 30.4 °C/W |
Instructions for Use:
Supply Voltage:
- Ensure that the supply voltage (Vdd and Vddq) is set to 1.35V ± 0.075V.
Power-Up Sequence:
- Apply Vdd and Vddq simultaneously.
- Wait for at least 200 μs after power-up before issuing any commands.
- Perform a reset or initialization sequence as specified in the datasheet.
Initialization:
- After power-up, issue a Mode Register Set (MRS) command to initialize the device.
- Set the necessary mode register parameters such as CAS latency, burst length, etc.
Accessing Memory:
- Use the appropriate read and write commands to access memory locations.
- Ensure that all timing parameters (tRCD, tRP, tRAS, etc.) are met to avoid data corruption.
Refresh:
- The device requires periodic refresh cycles to maintain data integrity.
- The refresh cycle time (tREFI) is 7.8 μs, and a refresh command must be issued every 7.8 μs.
Power Management:
- To enter power-down mode, issue a power-down command.
- To exit power-down mode, wait for the specified exit time (tPD) before issuing any other commands.
Thermal Considerations:
- Ensure adequate cooling to keep the junction temperature within the operating range.
- The thermal resistance (θJA) is 30.4 °C/W, so consider the ambient temperature and heat dissipation when designing the system.
Handling:
- Handle the device with care to avoid static discharge and physical damage.
- Follow ESD (Electrostatic Discharge) precautions during handling and assembly.
For detailed information and specific application notes, refer to the full datasheet provided by Micron Technology.
(For reference only)Inquiry - MT41K512M8RH-125:E
