Share:


MJE4343

Specifications

SKU: 4879784

BUY MJE4343 https://www.utsource.net/itm/p/4879784.html
POWER TRANSISTORS COMPLEMENTARY SILICON
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 100 V
Emitter-Base Voltage VEB - - 6 V
Collector-Base Voltage VCB - - 80 V
Continuous Collector Current IC - 15 15 A
Power Dissipation PT - - 115 W
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to manage the power dissipation.
    • Use a suitable mounting torque to avoid damage to the transistor.
  2. Biasing:

    • Set the base current (IB) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
    • Avoid exceeding the maximum ratings for VCE, VEB, and VCB.
  3. Thermal Management:

    • Monitor the junction temperature (TJ) to prevent overheating.
    • Use thermal compounds to improve heat transfer between the transistor and the heatsink.
  4. Electrical Connections:

    • Connect the collector, base, and emitter terminals correctly to avoid damage.
    • Use appropriate wire gauges to handle the current levels.
  5. Storage:

    • Store the transistor in a dry, cool place within the specified storage temperature range.
    • Handle with care to avoid static discharge, which can damage the device.
  6. Testing:

    • Test the transistor using a multimeter or a transistor tester to verify its functionality.
    • Check for continuity and correct polarity before connecting it to the circuit.
(For reference only)

 Inquiry - MJE4343