Specifications
SKU: 4879784
POWER TRANSISTORS COMPLEMENTARY SILICON
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 100 | V |
Emitter-Base Voltage | VEB | - | - | 6 | V |
Collector-Base Voltage | VCB | - | - | 80 | V |
Continuous Collector Current | IC | - | 15 | 15 | A |
Power Dissipation | PT | - | - | 115 | W |
Junction Temperature | TJ | - | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage the power dissipation.
- Use a suitable mounting torque to avoid damage to the transistor.
Biasing:
- Set the base current (IB) to ensure the transistor operates in the desired region (saturation, active, or cutoff).
- Avoid exceeding the maximum ratings for VCE, VEB, and VCB.
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use thermal compounds to improve heat transfer between the transistor and the heatsink.
Electrical Connections:
- Connect the collector, base, and emitter terminals correctly to avoid damage.
- Use appropriate wire gauges to handle the current levels.
Storage:
- Store the transistor in a dry, cool place within the specified storage temperature range.
- Handle with care to avoid static discharge, which can damage the device.
Testing:
- Test the transistor using a multimeter or a transistor tester to verify its functionality.
- Check for continuity and correct polarity before connecting it to the circuit.
Inquiry - MJE4343