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MMBF5461

Specifications

SKU: 4891721

BUY MMBF5461 https://www.utsource.net/itm/p/4891721.html
P-Channel General Purpose Amplifier
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 30 V
Emitter-Collector Voltage VEBO - - 5 V
Base-Emitter Voltage VBE - 0.7 - V
Collector Current IC - - 200 mA
Continuous Collector Current IC(cont) - - 100 mA
Total Power Dissipation PTOT - - 350 mW
Operating Junction Temperature TJ(op) -55 - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Transition Frequency fT - 180 - MHz
DC Current Gain hFE 100 300 800 -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the MMBF5461 to temperatures outside its operating range.
    • Handle with care to avoid mechanical damage.
  2. Mounting:

    • Ensure proper heat dissipation if operating near the maximum power dissipation.
    • Follow recommended soldering profiles to prevent damage during assembly.
  3. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) according to the circuit diagram.
    • Use appropriate current-limiting resistors to protect the transistor from excessive base current.
  4. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep away from static sources to avoid electrostatic discharge (ESD) damage.
  5. Testing:

    • Test the transistor using a multimeter or transistor tester to ensure it is functioning correctly before installation.
    • Verify the VBE and VCE voltages are within the specified limits.
  6. Applications:

    • Suitable for general-purpose switching and amplification applications.
    • Ideal for use in circuits requiring high-frequency performance up to 180 MHz.
(For reference only)

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