BUY MRFG35005MT1 https://www.utsource.net/itm/p/4898447.html
Gallium Arsenide PHEMT RF Power Field Effect Transistor
Description: This is a high-performance, low-voltage, N-channel MOSFET from Freescale Semiconductor. It is designed to operate at a maximum drain-source voltage of 30V and a maximum drain current of 5A. Features: Low RDS(on) Low gate charge Low gate-source voltage Low threshold voltage High current handling capability High power dissipation High frequency operation High temperature operation Applications: DC-DC converters Motor control Load switching High-side switching Low-side switching Battery management Power management (For reference only)