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Specifications
SKU: 4912089
IC DRAM 64M PARALLEL 54TSOP
| Parameter | Description | Value |
|---|---|---|
| Device Type | 4M x 16 SDRAM | - |
| Package | 54-Pin TSOP (Type I) | - |
| Operating Voltage (Vcc) | Supply Voltage | 3.3V ± 0.3V |
| Operating Voltage (Vccq) | I/O Supply Voltage | 3.3V ± 0.3V |
| Data Width | Data Bus Width | 16 bits |
| Memory Size | Total Memory Capacity | 64 Mbits |
| Access Time (tAC) | Access Time from Clock Edge to Output Valid | 7.5 ns (max) |
| Cycle Time (tRC) | Row Cycle Time | 55 ns (max) |
| Refresh Rate | Refresh Cycle Time | 64 ms (max) |
| Column Address Strobe Latency (CL) | Cycles from Active Command to Read/Write Command | 2 cycles (fixed) |
| Row Precharge Time (tRP) | Row Precharge Time | 15 ns (max) |
| Row Active to Row Active Time (tRRD) | Row Active to Row Active Time | 15 ns (max) |
| Power Consumption (Active Mode) | Active Mode Power Consumption | 250 mW (typ) |
| Power Consumption (Standby Mode) | Standby Mode Power Consumption | 10 mW (typ) |
| Temperature Range | Operating Temperature | -40°C to +85°C |
| Endurance | Write/Read Cycles | Unlimited |
| Retention | Data Retention at 25°C | 10 years (min) |
Instructions for Use:
Power Supply Connection:
- Connect Vcc (3.3V ± 0.3V) to all Vcc pins.
- Connect Vccq (3.3V ± 0.3V) to all Vccq pins.
- Ground all GND pins.
Clock Signal (CLK):
- Apply a stable clock signal to the CLK pin. The frequency should be within the specified range for the device.
Control Signals:
- /CS (Chip Select): Low to enable the device.
- /RAS (Row Address Strobe): Low to activate a row.
- /CAS (Column Address Strobe): Low to access a column.
- /WE (Write Enable): Low to write data; high to read data.
- /OE (Output Enable): Low to enable output drivers (only used in some configurations).
Address Lines (A0-A12):
- Apply the row and column addresses to the address lines during the respective phases of the access cycle.
Data Lines (DQ0-DQ15):
- Data is read from or written to these lines during the read or write cycle.
Refresh Operation:
- Perform a refresh cycle every 64 ms to maintain data integrity. This can be done by issuing a refresh command (RAS low, CAS high, WE high).
Mode Register Set (MRS):
- Program the mode register to set the operating parameters such as burst length, burst type, and CAS latency. This is typically done at initialization.
Power Management:
- To enter standby mode, deassert /CS. This reduces power consumption significantly.
Timing Considerations:
- Ensure that all timing parameters, such as tAC, tRC, tRP, and tRRD, are met to avoid data corruption or incorrect operation.
Signal Integrity:
- Use proper PCB layout techniques to minimize noise and ensure reliable operation. Keep signal traces short and use decoupling capacitors near the power supply pins.
Storage and Handling:
- Store the device in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage. Use ESD-safe tools and work surfaces.
Inquiry - MT48LC4M16A2P-75:G
