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NTD5865NLT4G

Specifications

SKU: 4936002

BUY NTD5865NLT4G https://www.utsource.net/itm/p/4936002.html
N-Channel Power MOSFET 60 V, 40 A, 16 mΩ 1 NTD58 65NLT4G Datasheets Search Partnumber : Start with "NTD58 65NLT4G " - Total : 30 ( 1/1 Page) NO Part no Electronics Description View Electronic Manufacturer 30 NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK
Parameter Symbol Min Typ Max Unit Conditions
Drain-Source Voltage VDS - 60 - V
Gate-Source Voltage VGS -10 - 10 V
Continuous Drain Current ID - 32 - A TC = 25°C
Pulse Drain Current ID(pulse) - 48 - A tp = 10 ms, TC = 25°C
Power Dissipation PTOT - 109 - W TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.7 - °C/W
Total Gate Charge QG - 43 - nC VGS = 10V
Input Capacitance Ciss - 1650 - pF VDS = 10V
Output Capacitance Coss - 160 - pF VDS = 10V
Reverse Transfer Capacitance Crss - 120 - pF VDS = 10V

Instructions for Use:

  1. Handling Precautions:

    • The NTD5865NLT4G is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
    • Avoid exceeding the maximum ratings listed in the table to prevent damage.
  2. Mounting:

    • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.
    • Follow recommended PCB layout guidelines to minimize parasitic inductances and ensure reliable operation.
  3. Gate Drive:

    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
    • Ensure the gate voltage (VGS) is within the specified range to avoid damaging the device or compromising performance.
  4. Power Supply:

    • Ensure the power supply can handle the peak current requirements during switching.
    • Use appropriate filtering and decoupling capacitors to stabilize the power supply and reduce noise.
  5. Testing:

    • Perform initial testing at lower power levels to verify correct operation before scaling up to full load conditions.
    • Monitor temperature and other critical parameters during operation to ensure the device remains within safe operating limits.
  6. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Keep the device in its original packaging until ready for use to protect against ESD and physical damage.
(For reference only)

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