Specifications
SKU: 4936002
N-Channel Power MOSFET 60 V, 40 A, 16 mΩ 1 NTD58 65NLT4G Datasheets Search Partnumber : Start with "NTD58 65NLT4G " - Total : 30 ( 1/1 Page) NO Part no Electronics Description View Electronic Manufacturer 30 NTD5802N Power MOSFET 40 V, Single N−Channel, 101 A DPAK
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 60 | - | V | |
Gate-Source Voltage | VGS | -10 | - | 10 | V | |
Continuous Drain Current | ID | - | 32 | - | A | TC = 25°C |
Pulse Drain Current | ID(pulse) | - | 48 | - | A | tp = 10 ms, TC = 25°C |
Power Dissipation | PTOT | - | 109 | - | W | TC = 25°C |
Junction Temperature | TJ | - | - | 150 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Thermal Resistance, Junction to Case | RθJC | - | 0.7 | - | °C/W | |
Total Gate Charge | QG | - | 43 | - | nC | VGS = 10V |
Input Capacitance | Ciss | - | 1650 | - | pF | VDS = 10V |
Output Capacitance | Coss | - | 160 | - | pF | VDS = 10V |
Reverse Transfer Capacitance | Crss | - | 120 | - | pF | VDS = 10V |
Instructions for Use:
Handling Precautions:
- The NTD5865NLT4G is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
- Avoid exceeding the maximum ratings listed in the table to prevent damage.
Mounting:
- Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.
- Follow recommended PCB layout guidelines to minimize parasitic inductances and ensure reliable operation.
Gate Drive:
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
- Ensure the gate voltage (VGS) is within the specified range to avoid damaging the device or compromising performance.
Power Supply:
- Ensure the power supply can handle the peak current requirements during switching.
- Use appropriate filtering and decoupling capacitors to stabilize the power supply and reduce noise.
Testing:
- Perform initial testing at lower power levels to verify correct operation before scaling up to full load conditions.
- Monitor temperature and other critical parameters during operation to ensure the device remains within safe operating limits.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Keep the device in its original packaging until ready for use to protect against ESD and physical damage.
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