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PE4257

Specifications

SKU: 4973058

BUY PE4257 https://www.utsource.net/itm/p/4973058.html
?SPDT Absorptive UltraCMOS ?DC ?3.0 GHz RF Switch
Parameter Description Min Typ Max Unit
Supply Voltage (Vcc) Operating voltage range 2.7 - 5.5 V
Quiescent Current (Iq) Current consumed by the device when no switching is occurring - 0.1 - mA
Insertion Loss (IL) Signal loss through the switch when it is on - 0.5 - dB
Isolation (ISO) Attenuation between input and output when the switch is off 60 - - dB
Return Loss (RL) Measure of how much of the signal is reflected back to the source 15 - - dB
Switching Time (tsw) Time required to switch from one state to another - 50 - ns
Operating Temperature (Toper) Temperature range over which the device can operate reliably -40 - 85 °C
Storage Temperature (Tstg) Temperature range over which the device can be stored without damage -55 - 125 °C

Instructions for Using PE4257:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the specified range of 2.7V to 5.5V.
    • Use a stable power supply to avoid fluctuations that could affect performance.
  2. Quiescent Current:

    • The device consumes approximately 0.1mA of current when no switching is occurring. This is important for low-power applications.
  3. Insertion Loss:

    • The insertion loss is typically 0.5dB, indicating minimal signal loss when the switch is on. This ensures high signal integrity.
  4. Isolation:

    • The isolation is at least 60dB, providing excellent attenuation between the input and output when the switch is off. This helps prevent signal leakage.
  5. Return Loss:

    • The return loss is at least 15dB, indicating good matching to the characteristic impedance of the system, reducing signal reflections.
  6. Switching Time:

    • The typical switching time is 50ns, allowing for fast switching between states. This is crucial for high-speed applications.
  7. Operating Temperature:

    • The device can operate reliably within a temperature range of -40°C to 85°C. Ensure the operating environment does not exceed these limits.
  8. Storage Temperature:

    • The device can be stored in temperatures ranging from -55°C to 125°C without damage. However, ensure it is brought back to operating temperature before use.
  9. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal components. Use proper ESD protection measures.
  10. Mounting:

    • Follow the recommended PCB layout and mounting guidelines provided by the manufacturer to ensure optimal performance and reliability.
  11. Testing:

    • Before integrating the device into a larger system, perform initial tests to verify its functionality and parameters.
  12. Documentation:

    • Refer to the datasheet and application notes for more detailed information and specific use cases.
(For reference only)

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