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RFD16N05LSM9A

Specifications

SKU: 5056018

BUY RFD16N05LSM9A https://www.utsource.net/itm/p/5056018.html
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-252AA
Parameter Symbol Min Typical Max Unit Condition
Drain-Source Voltage VDS -55 - 50 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 16 - A TC = 25°C
Pulse Drain Current IDM - 48 - A tp = 10 ms, TC = 25°C
Power Dissipation PTOT - - 35 W TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • The RFD16N05LSM9A is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
    • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
  2. Mounting and Soldering:

    • Ensure that the PCB layout provides adequate heat dissipation for the device.
    • Use a soldering iron with a temperature not exceeding 300°C and complete soldering within 10 seconds per joint.
    • Allow the device to cool naturally after soldering to avoid thermal shock.
  3. Operating Conditions:

    • The device is designed for continuous operation at temperatures up to 150°C. However, ensure that the power dissipation does not exceed 35W at 25°C case temperature.
    • For applications requiring higher current or power, consider using a heatsink or forced air cooling.
  4. Gate Drive:

    • Apply gate-source voltages between -20V and +20V to control the device. Typical operating voltages are +10V to turn on and 0V to turn off.
    • Ensure that the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly for efficient switching.
  5. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • If stored for extended periods, check the device parameters before use to ensure they meet specifications.
  6. Testing:

    • Before integrating the device into a circuit, perform basic tests to verify its functionality. Common tests include measuring the drain-source resistance (RDS(on)) and the gate-source threshold voltage (VGS(th)).
  7. Documentation:

    • Refer to the datasheet for more detailed information on electrical characteristics, mechanical dimensions, and application notes.
(For reference only)

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