Specifications
SKU: 5056018
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-252AA
Parameter | Symbol | Min | Typical | Max | Unit | Condition |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | -55 | - | 50 | V | |
Gate-Source Voltage | VGS | -20 | - | 20 | V | |
Continuous Drain Current | ID | - | 16 | - | A | TC = 25°C |
Pulse Drain Current | IDM | - | 48 | - | A | tp = 10 ms, TC = 25°C |
Power Dissipation | PTOT | - | - | 35 | W | TC = 25°C |
Junction Temperature | TJ | - | - | 150 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The RFD16N05LSM9A is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
- Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
Mounting and Soldering:
- Ensure that the PCB layout provides adequate heat dissipation for the device.
- Use a soldering iron with a temperature not exceeding 300°C and complete soldering within 10 seconds per joint.
- Allow the device to cool naturally after soldering to avoid thermal shock.
Operating Conditions:
- The device is designed for continuous operation at temperatures up to 150°C. However, ensure that the power dissipation does not exceed 35W at 25°C case temperature.
- For applications requiring higher current or power, consider using a heatsink or forced air cooling.
Gate Drive:
- Apply gate-source voltages between -20V and +20V to control the device. Typical operating voltages are +10V to turn on and 0V to turn off.
- Ensure that the gate drive circuitry can provide sufficient current to charge and discharge the gate capacitance quickly for efficient switching.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- If stored for extended periods, check the device parameters before use to ensure they meet specifications.
Testing:
- Before integrating the device into a circuit, perform basic tests to verify its functionality. Common tests include measuring the drain-source resistance (RDS(on)) and the gate-source threshold voltage (VGS(th)).
Documentation:
- Refer to the datasheet for more detailed information on electrical characteristics, mechanical dimensions, and application notes.
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