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STD70N10F4

Specifications

SKU: 5211736

BUY STD70N10F4 https://www.utsource.net/itm/p/5211736.html
N-channel 100 V, 0.015 Ω, 60 A, STripFET? DeepGATE? Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Parameter Symbol Value Unit
Maximum Drain Current ID 70 A
Maximum Drain-Source Voltage VDS 100 V
Maximum Gate-Source Voltage VGS ±20 V
Maximum Power Dissipation PD 250 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature Range TSTG -55 to 150 °C
Continuous Drain Current (Tc=25°C) ID(25°C) 70 A
Continuous Drain Current (Tc=100°C) ID(100°C) 49 A
RDS(on) at VGS=10V, ID=35A RDS(on) 3.5
Total Gate Charge Qg 160 nC
Input Capacitance Ciss 5300 pF
Output Capacitance Coss 1800 pF
Reverse Transfer Capacitance Crss 1200 pF

Instructions for Use:

  1. Handling and Storage:

    • Store the device in a dry, cool place.
    • Handle with care to avoid static discharge, which can damage the MOSFET.
  2. Mounting:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Use a thermal compound between the device and the heatsink for better thermal conductivity.
  3. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Apply a suitable gate voltage (VGS) to control the drain current (ID).
  4. Operating Conditions:

    • Do not exceed the maximum ratings for drain current, drain-source voltage, and power dissipation.
    • Operate within the specified temperature range to ensure reliable performance.
  5. Testing:

    • Use appropriate test equipment to measure parameters such as RDS(on), Qg, and capacitances.
    • Follow standard testing procedures to avoid damaging the device.
  6. Safety:

    • Always disconnect the power supply before making any connections or modifications.
    • Use protective equipment when handling high-voltage circuits.
(For reference only)

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