Specifications
SKU: 5211736
N-channel 100 V, 0.015 Ω, 60 A, STripFET? DeepGATE? Power MOSFET in TO-220, DPAK, TO-247, D2PAK
Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum Drain Current | ID | 70 | A |
Maximum Drain-Source Voltage | VDS | 100 | V |
Maximum Gate-Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation | PD | 250 | W |
Junction Temperature | TJ | -55 to 150 | °C |
Storage Temperature Range | TSTG | -55 to 150 | °C |
Continuous Drain Current (Tc=25°C) | ID(25°C) | 70 | A |
Continuous Drain Current (Tc=100°C) | ID(100°C) | 49 | A |
RDS(on) at VGS=10V, ID=35A | RDS(on) | 3.5 | mΩ |
Total Gate Charge | Qg | 160 | nC |
Input Capacitance | Ciss | 5300 | pF |
Output Capacitance | Coss | 1800 | pF |
Reverse Transfer Capacitance | Crss | 1200 | pF |
Instructions for Use:
Handling and Storage:
- Store the device in a dry, cool place.
- Handle with care to avoid static discharge, which can damage the MOSFET.
Mounting:
- Ensure proper heat sinking to manage the maximum power dissipation.
- Use a thermal compound between the device and the heatsink for better thermal conductivity.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Apply a suitable gate voltage (VGS) to control the drain current (ID).
Operating Conditions:
- Do not exceed the maximum ratings for drain current, drain-source voltage, and power dissipation.
- Operate within the specified temperature range to ensure reliable performance.
Testing:
- Use appropriate test equipment to measure parameters such as RDS(on), Qg, and capacitances.
- Follow standard testing procedures to avoid damaging the device.
Safety:
- Always disconnect the power supply before making any connections or modifications.
- Use protective equipment when handling high-voltage circuits.
Inquiry - STD70N10F4