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Specifications
SKU: 5221071
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 600 | - | V | Maximum voltage between drain and source with gate open |
| Gate-Source Voltage | VGS | -20 | 0 | 20 | V | Maximum voltage between gate and source |
| Continuous Drain Current | ID | - | 26 | - | A | Maximum continuous current flowing from drain to source |
| Pulse Drain Current | ID(p) | - | 45 | - | A | Maximum pulse current flowing from drain to source (tp = 10 μs, IGT = 10 A) |
| Total Power Dissipation | PTOT | - | 250 | - | W | Maximum power dissipation at TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum junction temperature |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | Operating temperature range for storage |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage to the leads or body.
- Use ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure proper alignment of the device during mounting to avoid mechanical stress.
- Use a thermal interface material (TIM) to enhance heat dissipation if necessary.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure that the junction temperature does not exceed 175°C to prevent thermal runaway.
- Maintain the gate-source voltage within the specified range to avoid gate oxide breakdown.
Storage:
- Store the device in a dry, cool place within the temperature range of -55°C to 150°C.
- Avoid exposure to corrosive environments.
Testing:
- Use appropriate test equipment and procedures to avoid damaging the device.
- Follow the datasheet recommendations for test conditions and parameters.
Application Notes:
- For detailed application notes and design considerations, refer to the STW26NM60N datasheet available on the STMicroelectronics website.
- Consider using external components such as gate resistors and snubber circuits to optimize performance and protect the device.
Inquiry - STW26NM60N
