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Specifications
SKU: 5238799
MOSFETs Silicon N-Channel MOS (π-MOS)
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Rated Voltage | Vr | - | 250 | - | VAC | Maximum continuous operating voltage |
| Rated Current | Ir | - | 13 | - | A | Maximum continuous operating current |
| Holding Current | Ih | - | 6.5 | - | mA | Minimum current to maintain on-state |
| On-State Voltage | Vto | - | 1.2 | - | V | Voltage drop when on |
| Off-State Leakage | Ioff | - | 0.1 | - | mA | Leakage current when off |
| Trigger Current | It | - | 5 | - | mA | Minimum current to trigger on |
| Surge Current | Isurge | - | 100 | - | A | Non-repetitive peak current (8.3 ms, sine) |
| Power Dissipation | Pd | - | 15 | - | W | Maximum power dissipation |
| Operating Temp. | Tj | -40 | - | 125 | °C | Junction temperature range |
| Storage Temp. | Tstg | -55 | - | 150 | °C | Storage temperature range |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if operating near maximum current or power dissipation.
- Mount the device vertically to ensure adequate air circulation.
Triggering:
- Apply a trigger current greater than the minimum specified (5 mA) to turn the device on.
- Maintain the holding current (6.5 mA) to keep the device in the on state.
Protection:
- Use a suitable snubber circuit to protect against voltage transients.
- Ensure the load is within the rated voltage and current limits.
Thermal Management:
- Monitor the junction temperature to ensure it does not exceed 125°C.
- Use a heatsink if necessary to dissipate excess heat.
Storage:
- Store the device in a dry, cool place with temperatures between -55°C and 150°C.
Handling:
- Handle with care to avoid mechanical damage.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
Testing:
- Test the device under controlled conditions to verify its performance before integrating into a system.
Inquiry - TK13A25D
