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Specifications
SKU: 5249340
FLASH 64MBIT 65NS 48TSOP
| Parameter | Description | Value |
|---|---|---|
| Device Type | NAND Flash Memory | - |
| Memory Density | 64 Gb (8 GB) | - |
| Number of Dies | 1 Die | - |
| Interface | Toggle Mode 2.0 | - |
| I/O Voltage (VCCQ) | Supply Voltage for I/Os | 1.8 V ± 0.1 V |
| Core Voltage (VCC) | Supply Voltage for Core | 3.3 V ± 0.3 V |
| Data I/Os | Number of Data I/O Pins | 8 |
| Package | Package Type | BGA-169 |
| Operating Temperature | Industrial Temperature Range | -40°C to +85°C |
| Programming Voltage (VPP) | Programming Voltage | Not Required (Internal) |
| Read/Write Speed | Read/Write Performance | Up to 400 MB/s (Read), Up to 200 MB/s (Write) |
| Erase Block Size | Block Size for Erase Operation | 256 KB |
| Page Size | Page Size for Read/Write Operations | 8 KB (Data) + 448 Bytes (Spare Area) |
| Endurance | Program/Erase Cycles | 3,000 Cycles (Typical) |
| Retention | Data Retention | 10 Years at 25°C |
| Package Dimensions | Physical Size | 11.5 mm × 16 mm × 1.2 mm |
| RoHS Compliance | Environmental Compliance | Yes |
Instructions:
Power Supply:
- Connect VCCQ to 1.8 V ± 0.1 V.
- Connect VCC to 3.3 V ± 0.3 V.
Signal Levels:
- All I/O signals should be compatible with 1.8 V logic levels.
- Ensure proper pull-up or pull-down resistors are used for control signals as required.
Initialization:
- After power-up, wait for the device to complete its internal initialization sequence before issuing any commands.
- Use the READ ID command (0x90) to verify the device is properly initialized.
Command Sequence:
- Refer to the command table in the datasheet for specific command sequences.
- Common commands include READ (0x00), PROGRAM (0x80), ERASE (0x60), and STATUS READ (0x70).
Programming and Erasing:
- Use the PROGRAM command to write data to a page.
- Use the ERASE command to erase a block.
- Ensure that the block is not being read or written to during the erase operation.
Error Handling:
- Check the status register after each command to ensure successful execution.
- Handle errors such as write protect, device busy, and program/erase failures appropriately.
Data Integrity:
- Use the ECC (Error Correction Code) features provided by the device to ensure data integrity.
- Implement ECC algorithms in your system if not using a controller that supports ECC.
Thermal Management:
- Ensure adequate cooling for the device, especially during high-speed read/write operations.
- Monitor the temperature and avoid operating the device outside its specified temperature range.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Follow ESD (Electrostatic Discharge) precautions when handling the device.
Documentation:
- Refer to the datasheet and application notes for detailed information on advanced features and troubleshooting.
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