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Specifications
SKU: 5352402
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
| Parameter | Description | Value |
|---|---|---|
| Part Number | Unique identifier for the component | UMC4N |
| Type | Type of component | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Polarity | Polarity of the MOSFET | N-Channel |
| VDS (Drain-to-Source Voltage) | Maximum voltage that can be applied between the drain and source terminals | 60V |
| VGS (Gate-to-Source Voltage) | Maximum voltage that can be applied between the gate and source terminals | ±20V |
| RDS(on) (On-State Resistance) | Resistance between the drain and source when the MOSFET is fully on | 45 mΩ (at VGS = 10V) |
| ID (Continuous Drain Current) | Maximum continuous current that can flow through the drain terminal | 16A |
| Ptot (Total Power Dissipation) | Maximum power that the MOSFET can dissipate | 80W |
| Tj (Junction Temperature) | Maximum operating temperature of the junction | -55°C to +175°C |
| Package | Type of package used for the component | TO-220 |
| Mounting Type | Method of mounting the component | Through-Hole |
Instructions for Use
Handling Precautions:
- ESD Protection: The UMC4N is sensitive to electrostatic discharge (ESD). Always handle the component with proper ESD protection, such as an ESD wrist strap.
- Temperature Sensitivity: Avoid exposing the component to temperatures outside its specified range.
Circuit Design:
- Gate Drive: Ensure that the gate-to-source voltage (VGS) is within the specified limits to avoid damage to the MOSFET.
- Heat Sinking: If the MOSFET will be operating at high currents or power levels, consider using a heat sink to manage the temperature and prevent overheating.
- Parasitic Inductance: Minimize parasitic inductance in the circuit by keeping leads and traces as short as possible.
Installation:
- Soldering: Use a soldering iron with a temperature setting appropriate for the TO-220 package. Avoid overheating the component during soldering.
- Mechanical Stress: Do not apply excessive mechanical stress to the leads or body of the component during installation.
Testing:
- Initial Testing: After installation, perform initial testing to ensure the MOSFET is functioning correctly. Check for proper gate drive and correct current flow.
- Thermal Monitoring: Monitor the temperature of the MOSFET during operation to ensure it does not exceed the maximum junction temperature.
Storage:
- Environment: Store the UMC4N in a dry, cool environment away from direct sunlight and sources of heat.
- ESD Protection: Keep the component in an ESD-safe container or bag when not in use.
By following these parameters and instructions, you can ensure the reliable and safe operation of the UMC4N MOSFET in your application.
(For reference only)Inquiry - UMC4N
