BUY IKW15N120T2 https://www.utsource.net/itm/p/5442888.html
Hard-switching 1200 V, 15 A TRENCHSTOP? IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
IKW15N120T2 is a N-channel MOSFET produced by Infineon Technologies. It has a maximum drain source voltage of 1200V and a maximum drain current of 15A. Features: - High-speed switching - Low on-state resistance - Low gate charge - Low input capacitance - Avalanche energy rated Applications: - Motor control - Switching power supplies - Uninterruptible power supplies - Lighting control - Automotive applications (For reference only)