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IXDH35N60BD1

Specifications

SKU: 6412425

BUY IXDH35N60BD1 https://www.utsource.net/itm/p/6412425.html
with optional Diode
Parameter Symbol Min Typical Max Unit Condition
Drain-Source On-State Resistance RDS(on) - 0.35 - Ω VGS = 10V, ID = 20A
Gate-Source Threshold Voltage VGS(th) 2.0 - 4.0 V ID = 250μA
Maximum Drain Current ID - - 35 A Tj = 25°C
Maximum Drain Current (Pulsed) ID(m) - - 80 A tp = 10ms, IG = 10A
Maximum Gate-Source Voltage VGS - - ±20 V -
Maximum Drain-Source Voltage VDS - - 600 V -
Total Power Dissipation PTOT - - 270 W TC = 25°C
Junction Temperature Tj - - 175 °C -
Storage Temperature Range TSTG -55 - 150 °C -

Instructions:

  1. Handling and Storage:

    • Store in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  2. Mounting:

    • Ensure proper thermal management by using a heatsink if necessary.
    • Apply thermal paste between the device and heatsink for better heat dissipation.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to avoid damaging the gate.
    • Use a gate resistor to limit the current and prevent oscillations.
  4. Operation:

    • Do not exceed the maximum drain current (ID) or pulsed drain current (ID(m)).
    • Keep the junction temperature (Tj) below the maximum rating to ensure reliable operation.
  5. Testing:

    • Test the device under controlled conditions to verify its performance.
    • Use appropriate test equipment and follow safety guidelines.
  6. Safety:

    • Always disconnect power before making any connections or changes to the circuit.
    • Use protective gear such as gloves and safety glasses when handling high-voltage components.
(For reference only)

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