Specifications
SKU: 6412425
with optional Diode
Parameter | Symbol | Min | Typical | Max | Unit | Condition |
---|---|---|---|---|---|---|
Drain-Source On-State Resistance | RDS(on) | - | 0.35 | - | Ω | VGS = 10V, ID = 20A |
Gate-Source Threshold Voltage | VGS(th) | 2.0 | - | 4.0 | V | ID = 250μA |
Maximum Drain Current | ID | - | - | 35 | A | Tj = 25°C |
Maximum Drain Current (Pulsed) | ID(m) | - | - | 80 | A | tp = 10ms, IG = 10A |
Maximum Gate-Source Voltage | VGS | - | - | ±20 | V | - |
Maximum Drain-Source Voltage | VDS | - | - | 600 | V | - |
Total Power Dissipation | PTOT | - | - | 270 | W | TC = 25°C |
Junction Temperature | Tj | - | - | 175 | °C | - |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Instructions:
Handling and Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid static discharge, which can damage the device.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary.
- Apply thermal paste between the device and heatsink for better heat dissipation.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damaging the gate.
- Use a gate resistor to limit the current and prevent oscillations.
Operation:
- Do not exceed the maximum drain current (ID) or pulsed drain current (ID(m)).
- Keep the junction temperature (Tj) below the maximum rating to ensure reliable operation.
Testing:
- Test the device under controlled conditions to verify its performance.
- Use appropriate test equipment and follow safety guidelines.
Safety:
- Always disconnect power before making any connections or changes to the circuit.
- Use protective gear such as gloves and safety glasses when handling high-voltage components.
Inquiry - IXDH35N60BD1