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IXDP20N60BD1

Specifications

SKU: 6415422

BUY IXDP20N60BD1 https://www.utsource.net/itm/p/6415422.html
High Voltage IGBT with optional Diode
Description: IXDP20N60BD1 is a N-Channel MOSFET from IXYS. It is a TO-220 package with a maximum drain source voltage of 600V and a maximum drain current of 20A. Features: Low on-resistance Low gate charge Low input capacitance High current handling capability Low thermal resistance Applications: Switching applications Motor control Power supply Lighting control Battery management (For reference only)

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