Specifications
SKU: 6415422
High Voltage IGBT with optional Diode
Description: IXDP20N60BD1 is a N-Channel MOSFET from IXYS. It is a TO-220 package with a maximum drain source voltage of 600V and a maximum drain current of 20A. Features: Low on-resistance Low gate charge Low input capacitance High current handling capability Low thermal resistance Applications: Switching applications Motor control Power supply Lighting control Battery management (For reference only)
Inquiry - IXDP20N60BD1