Share:


BUK9E06-55A

Specifications

SKU: 6485516

BUY BUK9E06-55A https://www.utsource.net/itm/p/6485516.html

Parameter Symbol Min Typ Max Unit Conditions
Supply Voltage VDS -55 - 55 V
Continuous Drain Current ID - 12 18 A Tj = 25°C, VGS = 10V
Pulse Drain Current ID(pulse) - 36 48 A Tj = 25°C, VGS = 10V, tp = 10ms, IG = ±1A
Gate-Source Voltage VGS -10 - 10 V
Gate-Source Threshold Voltage VGS(th) 1.5 2.5 4.0 V ID = 250μA, Tj = 25°C
RDS(on) RDS(on) - 25 35 VGS = 10V, ID = 12A, Tj = 25°C
Total Power Dissipation PTOT - - 115 W TC = 25°C
Junction Temperature Tj - - 175 °C
Storage Temperature Tstg -65 - 150 °C

Instructions for Use:

  1. Supply Voltage (VDS):

    • Ensure the supply voltage does not exceed 55V to avoid damaging the device.
    • The device can handle negative voltages up to -55V.
  2. Continuous Drain Current (ID):

    • The continuous drain current should not exceed 18A at 25°C junction temperature.
    • For higher temperatures, derate the current accordingly to avoid overheating.
  3. Pulse Drain Current (ID(pulse)):

    • The pulse drain current can be up to 48A for short durations (10ms) with a gate drive current of ±1A.
    • Ensure the pulse duration is within the specified limits to prevent thermal damage.
  4. Gate-Source Voltage (VGS):

    • The gate-source voltage should be kept between -10V and 10V to avoid damaging the gate oxide.
    • Avoid applying voltages outside this range.
  5. Gate-Source Threshold Voltage (VGS(th)):

    • The device will start conducting when the gate-source voltage reaches approximately 2.5V.
    • Ensure the gate drive circuitry provides sufficient voltage to fully turn on the MOSFET.
  6. RDS(on):

    • The on-state resistance is typically 25mΩ at 25°C and 10V gate-source voltage.
    • Higher temperatures or lower gate-source voltages will increase the resistance.
  7. Total Power Dissipation (PTOT):

    • The maximum power dissipation is 115W at 25°C case temperature.
    • Use appropriate heat sinking to manage power dissipation and maintain safe operating temperatures.
  8. Junction Temperature (Tj):

    • The maximum junction temperature is 175°C.
    • Monitor the junction temperature to ensure it does not exceed this limit.
  9. Storage Temperature (Tstg):

    • Store the device in an environment where the temperature ranges from -65°C to 150°C.
    • Avoid exposing the device to extreme temperatures during storage.

Additional Notes:

  • Always follow good thermal management practices to ensure reliable operation.
  • Use proper PCB layout techniques to minimize parasitic inductances and resistances.
  • Refer to the datasheet for more detailed information and specific application notes.
(For reference only)

 Inquiry - BUK9E06-55A