Specifications
SKU: 6485516
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Supply Voltage | VDS | -55 | - | 55 | V | |
Continuous Drain Current | ID | - | 12 | 18 | A | Tj = 25°C, VGS = 10V |
Pulse Drain Current | ID(pulse) | - | 36 | 48 | A | Tj = 25°C, VGS = 10V, tp = 10ms, IG = ±1A |
Gate-Source Voltage | VGS | -10 | - | 10 | V | |
Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2.5 | 4.0 | V | ID = 250μA, Tj = 25°C |
RDS(on) | RDS(on) | - | 25 | 35 | mΩ | VGS = 10V, ID = 12A, Tj = 25°C |
Total Power Dissipation | PTOT | - | - | 115 | W | TC = 25°C |
Junction Temperature | Tj | - | - | 175 | °C | |
Storage Temperature | Tstg | -65 | - | 150 | °C |
Instructions for Use:
Supply Voltage (VDS):
- Ensure the supply voltage does not exceed 55V to avoid damaging the device.
- The device can handle negative voltages up to -55V.
Continuous Drain Current (ID):
- The continuous drain current should not exceed 18A at 25°C junction temperature.
- For higher temperatures, derate the current accordingly to avoid overheating.
Pulse Drain Current (ID(pulse)):
- The pulse drain current can be up to 48A for short durations (10ms) with a gate drive current of ±1A.
- Ensure the pulse duration is within the specified limits to prevent thermal damage.
Gate-Source Voltage (VGS):
- The gate-source voltage should be kept between -10V and 10V to avoid damaging the gate oxide.
- Avoid applying voltages outside this range.
Gate-Source Threshold Voltage (VGS(th)):
- The device will start conducting when the gate-source voltage reaches approximately 2.5V.
- Ensure the gate drive circuitry provides sufficient voltage to fully turn on the MOSFET.
RDS(on):
- The on-state resistance is typically 25mΩ at 25°C and 10V gate-source voltage.
- Higher temperatures or lower gate-source voltages will increase the resistance.
Total Power Dissipation (PTOT):
- The maximum power dissipation is 115W at 25°C case temperature.
- Use appropriate heat sinking to manage power dissipation and maintain safe operating temperatures.
Junction Temperature (Tj):
- The maximum junction temperature is 175°C.
- Monitor the junction temperature to ensure it does not exceed this limit.
Storage Temperature (Tstg):
- Store the device in an environment where the temperature ranges from -65°C to 150°C.
- Avoid exposing the device to extreme temperatures during storage.
Additional Notes:
- Always follow good thermal management practices to ensure reliable operation.
- Use proper PCB layout techniques to minimize parasitic inductances and resistances.
- Refer to the datasheet for more detailed information and specific application notes.
Inquiry - BUK9E06-55A