Share:


2N3994A

Specifications

SKU: 6488917

BUY 2N3994A https://www.utsource.net/itm/p/6488917.html
P-channel Silicon Junction Field-effect Transistor
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 60 V
Collector-Base Voltage VCBO - - 70 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 100 mA
Base Current IB - - 10 mA
Power Dissipation PT - - 625 mW
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2N3994A with care to avoid static damage.
    • Ensure that the device is not exposed to temperatures outside its specified range.
  2. Mounting:

    • Use appropriate heat sinks if operating at or near maximum power dissipation.
    • Ensure good thermal contact between the transistor and the heat sink.
  3. Biasing:

    • Properly bias the base-emitter junction to ensure reliable operation.
    • Avoid exceeding the maximum base current to prevent damage.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure that the collector-emitter voltage (VCEO) and collector current (IC) are within safe limits to avoid overheating and potential failure.
  5. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Keep the device in its original packaging until ready for use.
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2N3994A before installation.
    • Test the device under controlled conditions to ensure it meets the required specifications.
  7. Soldering:

    • Use a low-wattage soldering iron to avoid thermal shock.
    • Solder quickly to minimize exposure to high temperatures.
  8. Applications:

    • The 2N3994A is suitable for general-purpose switching and amplification applications.
    • It can be used in circuits requiring moderate power and current handling capabilities.
(For reference only)

 Inquiry - 2N3994A