Specifications
SKU: 6488917
P-channel Silicon Junction Field-effect Transistor
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 60 | V |
Collector-Base Voltage | VCBO | - | - | 70 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | - | 100 | mA |
Base Current | IB | - | - | 10 | mA |
Power Dissipation | PT | - | - | 625 | mW |
Junction Temperature | TJ | - | - | 150 | °C |
Storage Temperature Range | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the 2N3994A with care to avoid static damage.
- Ensure that the device is not exposed to temperatures outside its specified range.
Mounting:
- Use appropriate heat sinks if operating at or near maximum power dissipation.
- Ensure good thermal contact between the transistor and the heat sink.
Biasing:
- Properly bias the base-emitter junction to ensure reliable operation.
- Avoid exceeding the maximum base current to prevent damage.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure that the collector-emitter voltage (VCEO) and collector current (IC) are within safe limits to avoid overheating and potential failure.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Keep the device in its original packaging until ready for use.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the 2N3994A before installation.
- Test the device under controlled conditions to ensure it meets the required specifications.
Soldering:
- Use a low-wattage soldering iron to avoid thermal shock.
- Solder quickly to minimize exposure to high temperatures.
Applications:
- The 2N3994A is suitable for general-purpose switching and amplification applications.
- It can be used in circuits requiring moderate power and current handling capabilities.
Inquiry - 2N3994A