Specifications
SKU: 6497778
17A; 600V; 0.61ohm; N-CHANNEL; Si; POWER; MOSFET; TO-3PB; 3 PIN
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDS | 300 | V |
Gate-Source Voltage | VGS | ±20 | V |
Continuous Drain Current | ID | 10 | A |
Pulse Drain Current | IDpeak | 30 | A |
Transconductance | gfs | 6.0 | S |
Input Capacitance | Ciss | 750 | pF |
Output Capacitance | Coss | 350 | pF |
Reverse Transfer Capacitance | Crss | 150 | pF |
Junction Temperature | TJ | -55 to 150 | °C |
Storage Temperature | Tstg | -55 to 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat dissipation by mounting the 2SK4125 on a heatsink.
- Use thermal compound between the transistor and the heatsink for better heat transfer.
Biasing:
- Apply a gate-source voltage (VGS) within the specified range to control the drain current (ID).
- Ensure that the gate voltage does not exceed the maximum ratings to avoid damage.
Operation:
- Operate the device within the continuous drain current (ID) and pulse drain current (IDpeak) limits to prevent overheating and potential failure.
- Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
Storage:
- Store the 2SK4125 in a dry, cool place with temperatures within the storage temperature range (Tstg).
Handling:
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Testing:
- Use appropriate test equipment and methods to verify the parameters and performance of the 2SK4125.
- Follow safety guidelines when testing high-voltage and high-current circuits.
Inquiry - 2SK4125