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2SK4125

Specifications

SKU: 6497778

BUY 2SK4125 https://www.utsource.net/itm/p/6497778.html
17A; 600V; 0.61ohm; N-CHANNEL; Si; POWER; MOSFET; TO-3PB; 3 PIN
Parameter Symbol Value Unit
Drain-Source Voltage VDS 300 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 10 A
Pulse Drain Current IDpeak 30 A
Transconductance gfs 6.0 S
Input Capacitance Ciss 750 pF
Output Capacitance Coss 350 pF
Reverse Transfer Capacitance Crss 150 pF
Junction Temperature TJ -55 to 150 °C
Storage Temperature Tstg -55 to 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat dissipation by mounting the 2SK4125 on a heatsink.
    • Use thermal compound between the transistor and the heatsink for better heat transfer.
  2. Biasing:

    • Apply a gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • Ensure that the gate voltage does not exceed the maximum ratings to avoid damage.
  3. Operation:

    • Operate the device within the continuous drain current (ID) and pulse drain current (IDpeak) limits to prevent overheating and potential failure.
    • Keep the junction temperature (TJ) within the specified range to ensure reliable operation.
  4. Storage:

    • Store the 2SK4125 in a dry, cool place with temperatures within the storage temperature range (Tstg).
  5. Handling:

    • Handle the device with care to avoid mechanical stress or damage to the leads.
    • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
  6. Testing:

    • Use appropriate test equipment and methods to verify the parameters and performance of the 2SK4125.
    • Follow safety guidelines when testing high-voltage and high-current circuits.
(For reference only)

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