BUY IRGB20B60PD1PBF https://www.utsource.net/itm/p/7266459.html
Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

Parameter	Symbol	Min	Typical	Max	Unit
Continuous Collector Current	IC	-	60	-	A
Collector-Emitter Breakdown Voltage	V(BR)CEO	550	-	650	V
Emitter-Base Breakdown Voltage	V(BR)EBO	7	-	9	V
Collector-Emitter Saturation Voltage	VCE(sat)	-	1.8	-	V
Base-Emitter Saturation Voltage	VBE(sat)	-	1.2	-	V
Storage Temperature Range	Tstg	-55	-	150	°C
Junction Temperature	TJ	-55	-	150	°C
Total Device Dissipation	PD	-	180	-	W

Instructions for IRGB20B60PD1PBF

1. Handling and Storage:

   • Store the device in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent mechanical damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking to manage the junction temperature (TJ).
   • Use appropriate mounting hardware and thermal compound to enhance heat dissipation.

3. Electrical Connections:

   • Connect the collector, emitter, and base terminals correctly to avoid damage.
   • Use short leads to minimize inductive effects and improve performance.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Ensure the device operates within the recommended operating conditions to avoid thermal runaway.

5. Testing:

   • Use a suitable test setup to verify the device parameters before integrating it into the final application.
   • Test the device under controlled conditions to ensure reliability and performance.

6. Safety:

   • Always use appropriate safety measures when handling high-voltage and high-current circuits.
   • Follow all relevant safety standards and guidelines.

7. Soldering:

   • Use a soldering iron or machine with a temperature-controlled tip.
   • Avoid excessive heat and prolonged soldering times to prevent damage to the device.

8. Troubleshooting:

   • If the device fails, check for overvoltage, overcurrent, or overheating conditions.
   • Verify the connections and ensure that the device is properly heat-sinked.

For detailed application notes and further information, refer to the datasheet provided by Infineon Technologies.

(For reference only)