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Specifications
SKU: 7299616
Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 400 | V | IC = 0 A, Tj = 25°C |
| Emitter-Collector Voltage | VEBO | - | - | 7 | V | IC = 0 A, Tj = 25°C |
| Continuous Collector Current | IC | - | - | 11 | A | Tc = 25°C |
| Continuous Collector Current (Tc = 75°C) | IC(Tc = 75°C) | - | - | 8.5 | A | Tc = 75°C |
| Total Power Dissipation | PT | - | - | 130 | W | Tc = 25°C |
| Junction Temperature | Tj | - | - | 150 | °C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
| Thermal Resistance, Junction to Case | Rth(j-c) | - | - | 1.2 | K/W | - |
| Forward Transconductance | gfs | - | 160 | - | mS | VGE = 15V, IC = 1A, Tj = 25°C |
| Turn-On Delay Time | td(on) | - | 110 | - | ns | VGE = 15V, IC = 1A, Rg = 1Ω, LL = 30nH |
| Rise Time | tr | - | 90 | - | ns | VGE = 15V, IC = 1A, Rg = 1Ω, LL = 30nH |
| Turn-Off Delay Time | td(off) | - | 80 | - | ns | VGE = -15V, IC = 1A, Rg = 1Ω, LL = 30nH |
| Fall Time | tf | - | 60 | - | ns | VGE = -15V, IC = 1A, Rg = 1Ω, LL = 30nH |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage the thermal resistance and maintain the junction temperature within safe limits.
- Handle the device with care to avoid mechanical stress and static discharge.
Electrical Connections:
- Connect the collector to the load and the emitter to the ground.
- Apply the gate voltage (VGE) to control the current flow between the collector and emitter.
Operating Conditions:
- Do not exceed the maximum ratings for collector-emitter voltage, continuous collector current, and total power dissipation.
- Operate the device within the specified storage and junction temperature ranges to ensure reliability and longevity.
Thermal Management:
- Use appropriate thermal management techniques such as heatsinks or cooling systems to keep the junction temperature below 150°C.
- Monitor the thermal resistance (Rth(j-c)) to ensure effective heat dissipation.
Switching Characteristics:
- Optimize the gate resistor (Rg) and inductance (LL) to achieve desired switching times and minimize switching losses.
- Be aware of the turn-on and turn-off delay times and rise/fall times to design efficient switching circuits.
Storage and Handling:
- Store the device in a dry, cool environment to prevent moisture damage.
- Follow anti-static precautions to protect the device from electrostatic discharge (ESD).
Testing and Troubleshooting:
- Regularly test the device parameters to ensure they remain within specified limits.
- If the device fails, check for overvoltage, overcurrent, or thermal issues that may have caused the failure.
Inquiry - IPB011N04L G
