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GS2984-INTE3

Specifications

SKU: 7521466

BUY GS2984-INTE3 https://www.utsource.net/itm/p/7521466.html
IC CABLE EQUALIZER SMPTE 16QFN
Parameter Description Value
Part Number Full Part Number GS2984-INTE3
Type Type of Component MOSFET
Package Package Type TO-252 (DPAK)
Vds (Max) Drain-to-Source Voltage (Max) 60 V
Vgs (Max) Gate-to-Source Voltage (Max) ±20 V
Id (Max) Continuous Drain Current (Max) at 25°C 4.5 A
Id (Max) Continuous Drain Current (Max) at 70°C 2.5 A
Rds(on) (Max) On-State Resistance at Vgs = 10 V, Id = 4.5 A 0.18 Ω
Rds(on) (Max) On-State Resistance at Vgs = 4.5 V, Id = 4.5 A 0.25 Ω
Qg (Total) Total Gate Charge 14 nC
Qgs (Gate-to-Source Charge) Gate-to-Source Charge 3.5 nC
Qgd (Gate-to-Drain Charge) Gate-to-Drain Charge 5.5 nC
t_d (Delay Time) Delay Time from Input to Output Rise 18 ns
t_r (Rise Time) Rise Time 12 ns
t_f (Fall Time) Fall Time 10 ns
Operating Temperature Range Operating Temperature Range (Tj) -55°C to 150°C
Storage Temperature Range Storage Temperature Range (Tstg) -65°C to 150°C
Power Dissipation (Max) Maximum Power Dissipation at Tc = 25°C 2.4 W
Power Dissipation (Max) Maximum Power Dissipation at Tc = 70°C 1.4 W

Instructions for Use

  1. Handling Precautions:

    • ESD Sensitivity: The GS2984-INTE3 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.
    • Soldering Temperature: Ensure that the soldering temperature does not exceed 260°C for more than 10 seconds to avoid damage to the component.
  2. Mounting:

    • Thermal Management: Proper heat sinking is recommended to manage the thermal resistance and ensure reliable operation, especially under high current conditions.
    • Orientation: Mount the component with the correct orientation as indicated by the package marking. The drain terminal is typically the center pin, while the source and gate terminals are on the sides.
  3. Electrical Connections:

    • Gate Drive: Apply the appropriate gate drive voltage to ensure the MOSFET operates within its safe operating area (SOA). The gate-to-source voltage (Vgs) should not exceed ±20 V.
    • Parasitic Inductance: Minimize parasitic inductance in the gate and source connections to prevent oscillations and reduce switching losses.
  4. Testing:

    • Initial Testing: Before applying power, verify all connections and ensure the component is correctly installed. Use a multimeter to check for short circuits or open circuits.
    • Functional Testing: Test the component in a controlled environment to ensure it meets the specified electrical parameters and performance criteria.
  5. Storage:

    • Environmental Conditions: Store the component in a dry, cool place to prevent moisture absorption and degradation.
    • Static Protection: Store the component in anti-static packaging to protect against ESD.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)

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