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GS1531-CBE2

Specifications

SKU: 7522625

BUY GS1531-CBE2 https://www.utsource.net/itm/p/7522625.html
IC SERIALIZER MULTI-RATE 100BGA
Parameter Description Value
Part Number Full part number GS1531-CBE2
Type Type of device MOSFET
Package Package type TO-220
Polarity Polarity of the device N-Channel
Vds (V) Drain-to-Source Voltage 150 V
Vgs (V) Gate-to-Source Voltage ±20 V
Id (A) Continuous Drain Current 31 A
Rds(on) (mΩ) On-State Resistance at Vgs = 10V 4.5 mΩ
Power Dissipation (W) Maximum Power Dissipation 180 W
Operating Temperature (°C) Junction Temperature Range -55 to +150 °C
Storage Temperature (°C) Storage Temperature Range -65 to +175 °C
Thermal Resistance (°C/W) Junction to Case Thermal Resistance 1.5 °C/W

Instructions for Use

  1. Handling Precautions:

    • ESD Protection: The GS1531-CBE2 is sensitive to electrostatic discharge (ESD). Handle the device with ESD protection measures, such as wrist straps and grounded work surfaces.
    • Soldering: Use a temperature-controlled soldering iron and avoid overheating the device. Soldering temperature should not exceed 260°C for more than 10 seconds.
  2. Mounting:

    • Heat Sink: For optimal performance and heat dissipation, mount the device on a suitable heat sink. Ensure good thermal contact between the device and the heat sink using thermal paste or a thermal pad.
    • Torque Specification: Tighten the mounting screw to the recommended torque of 1.5 to 2.0 Nm to ensure proper contact without damaging the device.
  3. Electrical Connections:

    • Drain (D): Connect the drain terminal to the high-voltage side of the circuit.
    • Source (S): Connect the source terminal to the low-voltage side of the circuit.
    • Gate (G): Apply the gate voltage to control the switching of the MOSFET. Ensure that the gate voltage does not exceed the maximum rated value of ±20 V.
  4. Operation:

    • On-State Operation: When the gate voltage (Vgs) is applied above the threshold voltage, the MOSFET will turn on, allowing current to flow from the drain to the source with minimal resistance (Rds(on)).
    • Off-State Operation: When the gate voltage is below the threshold voltage, the MOSFET will turn off, blocking current flow between the drain and source.
  5. Testing:

    • Continuity Test: Use a multimeter to check the continuity between the drain and source terminals when the gate is grounded. There should be no continuity. Apply a positive gate voltage and check again; there should now be continuity.
    • Vgs Test: Measure the gate-to-source voltage to ensure it is within the specified range of ±20 V.
  6. Storage:

    • Environmental Conditions: Store the device in a dry, cool place away from direct sunlight and corrosive substances.
    • Static Protection: Keep the device in its original packaging or in an ESD-protected container to prevent damage from static electricity.

By following these instructions, you can ensure the reliable operation and longevity of the GS1531-CBE2 MOSFET.

(For reference only)

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