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AT17LV256-10NC

Specifications

SKU: 7551659

BUY AT17LV256-10NC https://www.utsource.net/itm/p/7551659.html
IC EEPROM FPGA 256KB 8-SOIC
Parameter Description Value
Device Type Non-Volatile Static Random Access Memory (NVS RAM) 256 Kbit
Organization Organization 32K x 8
VCC Range Supply Voltage 2.7 V to 3.6 V
VPP Range Programming Voltage 2.7 V to 3.6 V
Data Retention Data Retention at 25°C 20 years
Write Cycle Time Write Cycle Time 10 ms
Read Cycle Time Read Cycle Time 100 ns
Standby Current Standby Current (Typical) 1 μA
Active Current Active Current (Typical) 5 mA
Operating Temperature Operating Temperature Range -40°C to +85°C
Package Package Type SOIC-8, TSSOP-8
Pins Number of Pins 8
Write Protection Write Protection Hardware and Software
Endurance Endurance (Write/Read Cycles) 1 million

Instructions for Use

  1. Power Supply:

    • Connect VCC to the positive supply voltage (2.7 V to 3.6 V).
    • Connect VPP to the programming voltage (same as VCC).
  2. Ground Connection:

    • Connect GND (pin 4) to the ground.
  3. Address Lines:

    • Connect A0 to A14 to the address lines to select the memory location.
  4. Data Lines:

    • Connect D0 to D7 to the data lines for reading and writing data.
  5. Control Signals:

    • Chip Select (CS#): Low to enable the device.
    • Output Enable (OE#): Low to enable data output.
    • Write Enable (WE#): Low to initiate a write operation.
    • Write Protect (WP#): High to allow writes, low to protect against accidental writes.
  6. Write Operation:

    • Set CS# and WP# to low.
    • Apply the address to the address lines.
    • Apply the data to the data lines.
    • Set WE# to low for the duration of the write cycle (10 ms).
  7. Read Operation:

    • Set CS# and OE# to low.
    • Apply the address to the address lines.
    • Data will be available on the data lines after the read cycle time (100 ns).
  8. Data Retention:

    • Ensure the device is powered down properly to maintain data retention.
  9. Temperature Considerations:

    • Operate the device within the specified temperature range (-40°C to +85°C) to ensure reliable performance.
  10. Endurance:

    • The device can withstand up to 1 million write/read cycles.
  11. Storage:

    • Store the device in a dry, cool environment to prevent damage from moisture or extreme temperatures.
(For reference only)

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