Specifications
SKU: 8410406
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Breakdown Voltage | V(BR)DSS | - | 100 | - | V |
Continuous Drain Current | ID | - | 8.0 | - | A |
Pulse Drain Current (t = 10 μs, duty cycle 1%) | IDM | - | 50.0 | - | A |
Gate-Source Voltage | VGS | -10 | 0 | 10 | V |
Gate-Source Leakage Current | IGSS | - | 1.0 | - | μA |
RDS(on) at VGS = 10V | RDS(on) | - | 0.3 | - | Ω |
Power Dissipation | PD | - | 70 | - | W |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure that the device is handled with care to avoid mechanical stress.
- Use appropriate heat sinks to manage power dissipation, especially during high current operations.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
- Apply a suitable gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Operating Conditions:
- Do not exceed the maximum ratings for voltage, current, and temperature.
- Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate damage.
- Operate the device within the recommended operating conditions to ensure reliable performance.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum limit.
- Use thermal paste and heatsinks to improve heat dissipation.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Avoid exposure to extreme temperatures and humidity.
Testing:
- Use a suitable test setup to verify the device parameters before integrating it into a circuit.
- Follow standard testing procedures to ensure accurate measurements.
Inquiry - IRF100B201