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IRF100B201

Specifications

SKU: 8410406

BUY IRF100B201 https://www.utsource.net/itm/p/8410406.html

Parameter Symbol Min Typical Max Unit
Breakdown Voltage V(BR)DSS - 100 - V
Continuous Drain Current ID - 8.0 - A
Pulse Drain Current (t = 10 μs, duty cycle 1%) IDM - 50.0 - A
Gate-Source Voltage VGS -10 0 10 V
Gate-Source Leakage Current IGSS - 1.0 - μA
RDS(on) at VGS = 10V RDS(on) - 0.3 - Ω
Power Dissipation PD - 70 - W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is handled with care to avoid mechanical stress.
    • Use appropriate heat sinks to manage power dissipation, especially during high current operations.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly to avoid damage.
    • Apply a suitable gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  3. Operating Conditions:

    • Do not exceed the maximum ratings for voltage, current, and temperature.
    • Ensure that the gate-source voltage (VGS) is within the specified range to prevent gate damage.
    • Operate the device within the recommended operating conditions to ensure reliable performance.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum limit.
    • Use thermal paste and heatsinks to improve heat dissipation.
  5. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Avoid exposure to extreme temperatures and humidity.
  6. Testing:

    • Use a suitable test setup to verify the device parameters before integrating it into a circuit.
    • Follow standard testing procedures to ensure accurate measurements.
(For reference only)

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