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12JG11

Specifications

SKU: 8502345

BUY 12JG11 https://www.utsource.net/itm/p/8502345.html

Parameter Value Unit
Type NPN -
Collector-Emitter Voltage (VCEO) 800 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 65 W
Transition Frequency (fT) 3 MHz
Operating Temperature Range -55 to +150 °C
Storage Temperature Range -65 to +150 °C
Package Type TO-220 -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside its operating range.
    • Handle with care to prevent mechanical damage.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Use a thermal compound between the transistor and heat sink for better thermal conductivity.
  3. Electrical Connections:

    • Connect the collector to the positive supply or load.
    • Connect the emitter to ground or the negative side of the load.
    • Apply the base current carefully to avoid exceeding the maximum base-emitter voltage (VEBO).
  4. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging to protect from static discharge.
  5. Testing:

    • Use a multimeter to check for continuity and resistance between pins before installation.
    • Verify that the transistor is not damaged by measuring the forward and reverse bias characteristics.
  6. Soldering:

    • Use a temperature-controlled soldering iron to avoid overheating the transistor.
    • Solder quickly to minimize exposure to high temperatures.
  7. Application Notes:

    • Suitable for high-power switching and amplification applications.
    • Check the datasheet for detailed application circuits and examples.
(For reference only)

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