Specifications
SKU: 8519794
Bipolar Junction Transistor, NPN Type, TO-218VAR
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 40 | V |
Collector-Base Voltage | VCBO | - | - | 60 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | - | 150 | mA |
Base Current | IB | - | - | 15 | mA |
Power Dissipation | PT | - | - | 350 | mW |
Junction Temperature | TJ | - | - | 150 | °C |
Storage Temperature Range | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures exceeding the maximum junction temperature (150°C).
- Handle with care to prevent static damage. Use proper ESD protection.
Mounting:
- Ensure proper heat sinking if operating near the maximum power dissipation.
- Use recommended soldering techniques to avoid thermal shock.
Biasing:
- Ensure that the base current (IB) is within the specified limits to prevent damage.
- Use appropriate biasing circuits to maintain stable operation.
Testing:
- Test the transistor under controlled conditions to ensure it meets the specified parameters.
- Use a multimeter or transistor tester to verify the functionality.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in anti-static packaging to prevent damage.
Applications:
- Suitable for general-purpose amplification and switching applications.
- Commonly used in audio amplifiers, power supplies, and control circuits.
Inquiry - 2SC2665