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2SC2665

Specifications

SKU: 8519794

BUY 2SC2665 https://www.utsource.net/itm/p/8519794.html
Bipolar Junction Transistor, NPN Type, TO-218VAR
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 40 V
Collector-Base Voltage VCBO - - 60 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 150 mA
Base Current IB - - 15 mA
Power Dissipation PT - - 350 mW
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures exceeding the maximum junction temperature (150°C).
    • Handle with care to prevent static damage. Use proper ESD protection.
  2. Mounting:

    • Ensure proper heat sinking if operating near the maximum power dissipation.
    • Use recommended soldering techniques to avoid thermal shock.
  3. Biasing:

    • Ensure that the base current (IB) is within the specified limits to prevent damage.
    • Use appropriate biasing circuits to maintain stable operation.
  4. Testing:

    • Test the transistor under controlled conditions to ensure it meets the specified parameters.
    • Use a multimeter or transistor tester to verify the functionality.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in anti-static packaging to prevent damage.
  6. Applications:

    • Suitable for general-purpose amplification and switching applications.
    • Commonly used in audio amplifiers, power supplies, and control circuits.
(For reference only)

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