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GPT18N50DG

Specifications

SKU: 8646917

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Parameter Description Value
Part Number Full part number GPT18N50DG
Type Type of device MOSFET
Polarity Polarity type N-Channel
VDS (Max) Maximum Drain-to-Source Voltage 500 V
VGS (Max) Maximum Gate-to-Source Voltage ±20 V
ID (Max) Maximum Drain Current (Continuous) 18 A
RDS(on) (Max) On-State Resistance at VGS = 10 V 0.65 Ω
Power Dissipation (Max) Maximum Power Dissipation (TC = 25°C) 180 W
Operating Temperature Range Junction Temperature Range -55°C to +150°C
Storage Temperature Range Storage Temperature Range -65°C to +150°C
Package Type Package style TO-247
Lead Finish Lead finish type Matte Tin

Instructions for Use

  1. Handling Precautions:

    • ESD Protection: Handle the device with ESD (Electrostatic Discharge) protection measures to prevent damage.
    • Temperature Management: Ensure that the operating temperature does not exceed the maximum junction temperature of 150°C.
  2. Mounting and Soldering:

    • Soldering Temperature: Use a soldering iron with a temperature setting no higher than 350°C.
    • Soldering Time: Keep the soldering time to a minimum, ideally less than 10 seconds per connection.
    • Cooling: Allow the device to cool naturally after soldering to avoid thermal shock.
  3. Circuit Design:

    • Gate Drive: Ensure the gate drive circuit provides sufficient voltage to fully turn on the MOSFET and minimize RDS(on).
    • Heat Sinking: Use appropriate heat sinks to manage power dissipation, especially under high current conditions.
    • Parasitic Inductance: Minimize parasitic inductance in the circuit to reduce the risk of voltage spikes during switching.
  4. Testing:

    • Initial Testing: Perform initial testing at low power levels to verify proper operation before moving to full load conditions.
    • Thermal Monitoring: Monitor the temperature of the MOSFET during operation to ensure it remains within safe limits.
  5. Storage:

    • Humidity Control: Store the device in a dry environment to prevent moisture absorption.
    • Static Protection: Store the device in anti-static packaging to prevent damage from static electricity.

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)

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